Identification of MOS oxide defect location with a spatial resolution less than 0.1 μm using photoemission microscope

Abstract

The maximum photoemission position corresponding to the oxide defect was determined in a spatial resolution less than 0.1 p by a combination of an improved photoemission microscope with a magnification of 500x and a test structure of MOS capacitors which had a periodic X-Y matrix pattern to define the precise oxidedefect location. The field-oxide islands, which had photoemission spots from the oxide defects, distributed at random. The LOCOS edge corresponding to the intensity dent of the reflected light image was tocated at about +0.3 pm from the gate-oxide edge. The oxide-defects were located in +0.4 --0.1 pm from the LOCOS edge.