Failure Analysis of damaged dielectric on resistor and capacitor with EMMI and IR-OBIRCH

Liu, Tian; Wu, Miao; Fan, Dazhong; Wu, Chunlei; Wen, Gaojie; Wang, Dong

doi:10.1109/ipfa.2012.6306276

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…This technique provides a very powerful insight for circuit testing and characterization, including signal timing [6], logic states mapping [7], power grid evaluation [8]- [10], temperature measurements [11], [12], etc. The optical tools can also be used to characterize oxide breakdown in large FEOL MOS capacitors [13] and Time -Dependent Device Breakdown (TDDB) of Back-End Of the Line (BEOL) interconnects [14].…”

Section: Introductionmentioning

confidence: 99%

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Stellari

Ando

et al. 2021

IEEE Electron Device Lett.

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Near InfraRed (NIR) photon emission is observed from filaments in HfO 2 Resistive Random Access Memories (ReRAMs). This technique is non-destructive and offers rapid localization of filaments, enabling statistical analysis of their spatial distribution. We show that the emission is electric-field driven. We also report direct experimental evidence of i ) completely random spatial distribution of filaments across multiple devices and ii ) formation of multiple filaments inside a single large device.

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Section: Introductionmentioning

confidence: 99%

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Stellari

Ando

et al. 2021

IEEE Electron Device Lett.

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“…Este tipo de fallas se presenta durante la exposición de los capacitores a ciclos de alta temperatura, contribuyendo al incremento de la corriente de fuga. En consecuencia, la probabilidad de que los capacitores presenten un tipo de falla o exploten durante su servicio es alto, y a este fenómeno se le conoce como "centelleo" (Moonen, 2007;Lee, 2018;Tian, 2012). La fuga de corriente ha sido ampliamente investigadas para evaluar el efecto del proceso de fabricación en el rendimiento del capacitor durante su servicio.…”

Section: Introductionunclassified

Evaluación de la fuga de corriente en capacitores electrolíticos mediante dos procesos de envejecido

et al. 2022

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La fuga de corriente y sobrevoltaje son de los problemas más críticos en los sistemas eléctricos y electrónicos, los cuales están relacionados con quejas de clientes, y que se estima representan $ 1,920 millones de dólares en pérdidas anuales. En el presente trabajo se evaluaron la fuga de corriente en dispositivos electrónicos como lo son los capacitores electrolíticos con aplicaciones comerciales, y con especificaciones de 10 µm y 35 V. Dos procesos de envejecido fueron evaluados, el tradicional aplicando voltaje y temperatura, y un nuevo proceso eliminando la temperatura e incrementando el voltaje de operación. La efectividad para cada proceso se evaluó mediante equipos tradicionales de medición de corriente y voltaje. Se utilizaron herramientas estadísticas, como distribución logarítmica normal de 3 parámetros, series de tiempo y diagramas de probabilidad, con la finalidad de analizar los datos obtenidos para cada proceso. Se observó, que la fuga de corriente de ambos procesos es aceptable dentro de los límites de especificación, y para el nuevo proceso los resultados de las pruebas a largo plazo mostraron mayor efectividad

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“…In the past 25 years, PEM has been widely applied to study damaged thin oxides in the Front-End Of Line (FEOL), including damaged capacitors and resistors [15]. Similarly to the photon emission taking place in the transistor channel (both in saturation and off-state leakage conditions), the dielectric defects in thin oxides may emit a detectable Near InfraRed (NIR) if the electric field and current density are high enough.…”

Section: Introductionmentioning

confidence: 99%

Photon Emission Microscopy of HfO2 ReRAM Cells

Stellari

Ando

et al. 2021

International Symposium for Testing and Failure Analysis

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In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.

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Failure Analysis of damaged dielectric on resistor and capacitor with EMMI and IR-OBIRCH

Cited by 6 publications

References 9 publications

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

Evaluación de la fuga de corriente en capacitores electrolíticos mediante dos procesos de envejecido

Photon Emission Microscopy of HfO2 ReRAM Cells

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