Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistors

Abstract

Capture and emission time constants are measured for a set of individual interface traps in different metal-oxide-semiconductor field-effect transistors (MOSFETs) by random telegraph signals. The data are evaluated to extract the Coulomb energy induced by the transfer of a single electron into an interface trap. A unified Coulomb energy of the order of several hundred millivolts independent of trap-specific properties is found, which is proportional to temperature and decays logarithmically with inversion carrier density in the MOSFET channel. The Coulomb energy found is in quantitative agreement with the theoretical modeling. The Coulomb effect is large compared to the trap lowering by the electric field and to the residual entropy change.

Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal–oxide–semiconductor transistors

“…At this point, it should be noted that previous studies on n-channel devices did not reveal a significant dependence of the capture/emission time constants on the substrate bias, 11,12 which is opposite to what is observed here. A possible explanation is the different nature ͑charge state͒ of the oxide traps in both studies.…”

“…A possible explanation is the different nature ͑charge state͒ of the oxide traps in both studies. The capture cross sections derived here are substantially smaller than the typical values reported by Mueller et al 12 One important theoretical question to tackle is then to explain the strong transverse-field dependence of p . It has already been suggested that the capture process through a RTS is probably more complex than described by the simple SRH Eq.…”

Power and temperature dependence of low frequency noise in AlGaN∕GaN transmission line model structures

“…21 The free-energy change may be of the order of several hundred millivolts. 22 and this effect usually referred in literature as Coulomb blockade. 23 In this case additional barrier for electron tunneling from 2D channel to traps in the barrier appears that strongly affects the capturing time.…”

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

“…Individual charge traps can significantly alter the channel current of nm-sized FETs. At the same time, it has been observed that the capture kinetics of RTS in submicron FETs cannot be described by the wellknown Shockley-Read-Hall model, [1][2][3]8,9 in particular, at low currents and voltages.…”

“…[1][2][3][4][5][6] RTS is caused by the exchange of a single electron between an oxide trap and either a local energetic level or energy band in the semiconductor, while drain current is flowing. A beneficial characteristic of a single trap in the dielectric of liquid-gated FETs is that the RTS behavior can be used as a basic principle for novel, highly sensitive biosensors.…”