Evaluation of modern gate oxide technologies to process charging

Crook, Dwight L.; Domnitei, M.; Webb, Michael G.; Bonini, John

doi:10.1109/relphy.1993.283316

Cited by 10 publications

(8 citation statements)

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“…The extracted values from inversion region of C-V characteristics are all in the range between 2×10 16 cm -3 and 4×10 16 cm -3 , and within the nominal substrate specifications range (3.4x10 15 cm -3 to 7.8•10 16 cm -3 ). While C-V technique mainly assesses charges located near the semiconductor/dielectric interface, I-V characterization is especially sensitive to potential barrier changes near the injecting electrode [45]. As the I-V curves were measured in accumulation regime, injected electrons from the gate are expected to encounter a decreased dielectric potential barrier due to trapped positive charges near the injecting metal/dielectric interface [45].…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2Ogrown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and nonirradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100ºC and 200ºC and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

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Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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“…At the HRS, the threshold voltage is lower than for the fresh case. Then, for bipolar RS a negative threshold voltage shift is observed which suggests a positive charge trapping in the dielectric bulk at the HRS in both cases [15]. Figure 6 shows the fresh (open symbols) and HRS (closed symbols) I D -V D characteristics registered in pMOSFETs of figure 2 for bipolar RS (case A, circles in Fig.…”

Section: Impact On the Transistor Characteristicsmentioning

confidence: 95%

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Crespo-Yepes

Martín-Martínez

Rodrı́guez

et al. 2013

Microelectronics Reliability

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In this work, the Resistive Switching (RS) phenomenon is studied in n and pMOSFETs with ultrathin Hf based high-k dielectric. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. The influence of the voltage polarities applied to reach the HRS and the LRS on the RS phenomenology is analysed. The drain current -drain voltage and drain current -gate voltage transistor characteristic during the HRS has been also analysed in those cases where the RS has been observed. The results can be useful to understand the effect of the RS on the MOSFETs performance from a reliability point of view.

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“…When the voltage due to charge built-up is sufficiently large, Fowler-Nordheim (FN) tunneling current collected by the antenna structure is channeled through the thin gate oxide, causing degradation in gate oxide integrity. Recently, it has been reported in numerous studies that the incorporation of nitrogen in the gate dielectric through N O-oxidation can suppress process-induced damage [1]- [3]. Besides, nitrogen incorporation also increases the robustness to boron diffusion, an important feature for pMOS devices [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen

Lin

Chang

et al. 2000

IEEE Trans. Electron Devices

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Abstract-Plasma-induced damage in various 3-nm-thick gate oxides (i.e., pure oxides and N 2 O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Both charge-to-breakdown and gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as the wafer edge for pMOS devices, while only at the wafer center for nMOS devices. These interesting observations could be explained by the strong polarity dependence of ultra-thin oxides in charge-to-breakdown measurements of nMOS devices. In addition, pMOS devices were found to be more susceptible to charging damage, which can be attributed to the intrinsic polarity dependence in tunneling current between n-and p-MOSFET,s. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage can be significantly suppressed in N 2 O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided oxides were also found to be more robust when subjected to high temperature stressing. Therefore, nitrided oxides appear to be very promising for reducing plasma charging damage in future ULSI technologies employing ultrathin gate oxides.Index Terms-Dielectric breakdown, leakage current, nitrogen, plasma applications, semiconductor device reliability.

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Evaluation of modern gate oxide technologies to process charging

Cited by 10 publications

References 0 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

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