Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications

Abstract

In this work, the Resistive Switching (RS) phenomenon is studied in n and pMOSFETs with ultrathin Hf based high-k dielectric. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. The influence of the voltage polarities applied to reach the HRS and the LRS on the RS phenomenology is analysed. The drain current -drain voltage and drain current -gate voltage transistor characteristic during the HRS has been also analysed in those cases where the RS has been observed. The results can be useful to understand the effect of the RS on the MOSFETs performance from a reliability point of view.