Evaluation of energy-recovering interconnects for low-power 3D stacked ICs

Asimakopoulos, Panagiotis; Plas, G. Van der; Yakovlev, Alex; Marchal, Pierre

doi:10.1109/3dic.2009.5306581

2009 IEEE International Conference on 3D System Integration 2009

DOI: 10.1109/3dic.2009.5306581

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Evaluation of energy-recovering interconnects for low-power 3D stacked ICs

Panagiotis Asimakopoulos

G. Van der Plas

Alex Yakovlev

et al.

Abstract: Abstract-Energy-recovering schemes have been proposed in the literature as an alternative approach to low-power design, while their performance has been demonstrated to be extremely promising when driving large capacitive loads, such as clock distribution networks [1]. This work investigates the potential of the energy-recovering methodology for improving the energy efficiency of through-silicon via (TSV) interconnects in 3D ICs.

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2014

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New Trends in TSV

Ismail

El-Rouby

2014

Analog Circuits and Signal Processing

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In this chapter, several new directions are discussed for through silicon via (TSV) fabrication and use in design. Performance comparison between air-Gap gap-based coaxial TSV and conventional circular TSV is presented. The comparison shows that the air-gap TSVs reduce the overall parasitic capacitance and the overall energy loss compared to the conventional circular TSV or conventional coaxial TSV. High-performance 3D TSV interconnects are important for reliability. Choice of the filler material is also a critical issue as thermal incompatibility, electromigration and, high resistivities are still a bottleneck. In this book, SW-CNT bundles are investigated as a prospective filler material for TSV compared to conventional filler materials like Cu, W, and polysilicon. It is found that SW-CNT bundles exhibit unique electrical, thermal, and mechanical characteristics that can be used to fabricate better TSV interconnects.Moreover, in this chapter, TSV-based adiabatic logic based on the adiabatic switching principle is presented and analyzed. Adiabatic logic is a design technique for minimizing the energy dissipation. Its major limitation is the requirement for passive components, which cannot be efficiently integrated into current generation integrated circuits (ICs). TSV-based 3D heterogeneous integration may enable efficient integration of these passive elements, which were not practically feasible in the past due to technology limitations. Performance Comparison Between Air-Gap-Based Coaxial TSV and Conventional Circular TSVA TSV can be circular or rectangular, but the stress profile of a circular through silicon via (TSV) is better than a rectangular one. Conventional circular TSV is lossy due to low-resistivity substrate and has large signal degradation at high frequency. In order to improve the radio frequency (RF) performance, coaxial TSV is presented which is able to suppress undesirable substrate loss and provide good impedance matching. Also, fanlike air-gap coaxial TSV is presented for further improvement.

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New Trends in TSV

Ismail

El-Rouby

2014

Analog Circuits and Signal Processing

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Evaluation of energy-recovering interconnects for low-power 3D stacked ICs

Cited by 1 publication

References 10 publications

New Trends in TSV

New Trends in TSV

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