Evaluating BP Solar's Mono&lt;sup&gt;2 &amp;#x2122;&lt;/sup&gt; material: Lifetime and cell electrical data

Stoddard, Nathan; Sidhu, R.; Creager, Joe; Dey, Soham; Kinsey, B.; Maisano, Lisa; Phillips, C. E.; Clark, Roger; Zahler, James M.; Xie, Xianqing; Wu, Tingbin; Jiang, Qing-Tang

doi:10.1109/pvsc.2009.5411225

Cited by 12 publications

(10 citation statements)

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“…The development of casting mono crystalline technology makes the marriage of low cost and high efficiency possible [2]. Simultaneously, AIOx recently emerged as an effective material for the passivation of crystalline silicon (c-Si) surfaces, especially on p-type substrates or emitters, due to combination of chemical passivation and field-effect passivation provided by a large amount of fixed negative charges [3].…”

Section: Introductionmentioning

confidence: 99%

Industrially feasible casting-mono crystalline solar cells with PECVD AlO<inf>x</inf>/SiN<inf>x</inf> rear passivation stack towards 19.6% efficiency

Sun

Sheng

Shang

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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Cost reduction and efficiency gain are the maj or goals of research and development in crystalline silicon solar cell technology. Casting-mono crystalline silicon produces higher cell efficiencies compared to multi-crystalline silicon material with the same average minority carrier lifetime and with a similarly low production cost. Aluminum oxide provides excellent passivation on crystalline solar cell and has received great research interests in recent years due to combination of chemical passivation and field-effect passivation provided by a large amount of fixed negative charges. In particular, deposition of AIO, using ALD or PECVD in PERC structure has been well studied. PECVD is preferred for its fast deposition rate. Our research shows that PECVD AIO, films indeed show good passivation quality on casting-mono wafers, which can achieve more than 200l1s average lifetime, 700mV implied Voc and with good stability. Combined with the laser ablation to realize the PERC structure, the PECVD-AIO, contributes to a 12mV increase in Voc compared to the AI-BSF cell. The final cell efficiency reached 19.4% in average with a batch size of 30 wafers and 19.6% for the best cell. Additionally, PECVD AIO, can be easily integrated with the current industrial production line at no significant additional cost. INDEX TERMS: Casting-mono crystalline silicon, PECVD AIO" Passivation.

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Section: Introductionmentioning

confidence: 99%

Industrially feasible casting-mono crystalline solar cells with PECVD AlO<inf>x</inf>/SiN<inf>x</inf> rear passivation stack towards 19.6% efficiency

Sun

Sheng

Shang

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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“…Cast monolike silicon solar cells are a new type of photovoltaic (PV) cell that has drawn a lot of attention in PV industry recently [1][2][3]. Instead of pulling single crystalline silicon by Czochralski method, single crystalline silicon is grown from the melt by casting in monolike silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

“…Monolike silicon wafers are grown by casting from a seeded layer at the bottom of the crucible by heat exchange method [1,6]. Ideally, silicon grows vertically from bottom up in the same (100) orientation as the seeded layer, therefore creating single crystalline structure.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sub-Grains and Crystal Defects on Monolike Si Solar Cell Performance

Yang

Wu²,

Cooper³

2013

MSA

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This paper investigates crystalline orientation in monolike silicon wafers and its effect on solar cell performance. Monolike silicon wafers from two different bricks cut from interior and corner region of an ingot were compared. The mono grain in the interior brick is nearly perfect, but there are some large oblong shaped sub-grains in the corner brick. The large sub-grains at corner brick wafers are oriented at (311), instead of (100) orientation. The (311) grains contain high density of dislocation and cannot be effectively textured by alkaline solution, therefore lowering the cell efficiency significantly. There is about 0.86% (abs) cell efficiency reduction on the monolike cells that contain large sub-grains.

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“…In the dopant compensated silicon, the LID process could also be significantly slowed down, which might be attributed to the influence of B-P pairs [8]. However, the interactions between the B-O complex defects and structural defects, for example dislocations, still remains an open question because of the absence of samples containing different but uniform densities of dislocations, the same interstitial oxygen concentration ([O i ]) and dopant concentration.Cast quasi-single-crystalline (QSC) silicon is a novel substrate for high efficiency solar cells with low cost [9][10][11], since it inherits many advantages of both Czochralski (Cz) and multicrystalline (mc) silicon. The main structural defect in QSC silicon is the dislocations induced by thermal stresses during the casting process, having the density varying from 10 4 to 10 6 cm À 3 [11].…”

mentioning

confidence: 99%

“…Cast quasi-single-crystalline (QSC) silicon is a novel substrate for high efficiency solar cells with low cost [9][10][11], since it inherits many advantages of both Czochralski (Cz) and multicrystalline (mc) silicon. The main structural defect in QSC silicon is the dislocations induced by thermal stresses during the casting process, having the density varying from 10 4 to 10 6 cm À 3 [11].…”

mentioning

confidence: 99%

Dislocation-induced variation of generation kinetics of boron–oxygen complexes in silicon

Yuan

et al. 2012

Journal of Crystal Growth

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Evaluating BP Solar's Mono<sup>2 ™</sup> material: Lifetime and cell electrical data

Cited by 12 publications

References 1 publication

Industrially feasible casting-mono crystalline solar cells with PECVD AlO<inf>x</inf>/SiN<inf>x</inf> rear passivation stack towards 19.6% efficiency

Industrially feasible casting-mono crystalline solar cells with PECVD AlO<inf>x</inf>/SiN<inf>x</inf> rear passivation stack towards 19.6% efficiency

Effect of Sub-Grains and Crystal Defects on Monolike Si Solar Cell Performance

Dislocation-induced variation of generation kinetics of boron–oxygen complexes in silicon

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