Dislocation-induced variation of generation kinetics of boron–oxygen complexes in silicon

Gu, Xin; Yuan, Shu; Yu, Xuegong; Guo, Kuanxin; Yang, Deren

doi:10.1016/j.jcrysgro.2012.08.030

Cited by 2 publications

(1 citation statement)

References 16 publications

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“… Using n-type P-doped CZ silicon not produced from UMG [73,79,82,83,88,89]  Using quasi-monocrystalline silicon technology which has reduced O content. Also, dislocation rich Si, as in the case of quasi-monocrystalline silicon, results in an higher activation energy of B-O complexes [90].…”

Section: Light Induced Degradationmentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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