Estimation of SiC JFET temperature during short-circuit operations

Ageing of SiC JFET transistors under repetitive current limitation conditions

“…For this purpose 3D finite element model has been considered. This model was already validated in previous work [9] and has shown acceptable temperature estimation.…”

“…Thermal model has been already validated until maximum temperature equal to 600°C [9]. Repetitive tests presented in this section have been done with both devices (100 mX and 300 mX during phase 1 at 100 ls and 200 ls.…”

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

“…In [14], 1D and 3D models of a SiC JFET are built but only the temperature dependence of the thermal properties ( , ) of SiC are taken into account; in particular the latent heat of aluminium is neglected. The die-attach and a base plate are included in the simulations.…”

“…threshold voltage dispersion). However, due to the low in assumed in [14] that the heat removed from the die through the bond-wires can be neglected. As a matter of fact, given the time-scale of the study, the heat diffusion length is limited to a few tens of micrometres both in aluminium and SiC, which is much smaller that the distance between bond wires feet.…”

“…On the other hand, complete 3D FE simulations can be much more costly and accurate [3], [11]. If some papers perform electro-thermal simulations so as to couple thermal and electrical models [3], [5]- [7], [12], [13], others use experimental electrical measurements to define the heat source [9], [14]- [16].…”