Error in estimation of power switching losses based on electrical measurements

Ammous, Kaiçar; Allard, B.; Brevet, Olivier; Omari, Hafsa El; Bergogne, Dominique; Ligot, D.; Ehlinger, R.; Morel, Hervé; Ammous, Anis; Sellami, F.

doi:10.1109/pesc.2000.878859

Cited by 25 publications

(13 citation statements)

References 3 publications

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“…Probe models are also considered to produce simulation results as closed as possible to experiment. These probe models have been detailed in [28]. The probe models represent the input impedance, the delay and the distortions introduced by the probes.…”

Section: B Circuit Modelmentioning

confidence: 99%

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Garrab

Allard

Morel

et al. 2005

IEEE Trans. Power Electron.

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Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.

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Section: B Circuit Modelmentioning

confidence: 99%

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Garrab

Allard

Morel

et al. 2005

IEEE Trans. Power Electron.

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“…The Hall Effect probe is well adapted for the high DC currents and middle frequency (lower than 100 KHz). But, it is sensitive to the electromagnetic interferences [18,19]. However, it needs a complicated electronic circuit and they are sensitive to the CEM.…”

Section: B Current Measurementioning

confidence: 99%

“…The time t 2 -t 1 defined also the descent time of the drain source voltage, t FV . It is the necessary time to discharge the Miller capacity, C rss (2), of the SiC-JFET [19].…”

Section: A Sic-jfet Turn-offmentioning

confidence: 99%

A low-cost experimental test bench for electronic power devices

Mtimet

Kourda

Salah

2014

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM)

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A low-cost experimental test bench is proposed to test electronic power devices such as Diode, MOSFET, and JFET. This bench is based on the dc-dc converter. This latter controls the applied voltage and current. The proposed experimental bench consists to test devices in various types of dc-dc converter according to the current and voltage levels required. Experimental measurements of the new silicon carbide JFET device, for example, are presented and discussed.

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“…Voltage probe models are inserted in simulation to take care of the distortion on the experimental diode voltage waveforms. The probe models are detailed in [18].…”

Section: Analysis Of Versus During a Diode Reverse-recoverymentioning

confidence: 99%

Experimental Analysis of Punch-Through Conditions in Power $P$-$I$-$N$ Diodes

Salah

Buttay

Allard

et al. 2007

IEEE Trans. Power Electron.

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Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found.

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Error in estimation of power switching losses based on electrical measurements

Cited by 25 publications

References 3 publications

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

A low-cost experimental test bench for electronic power devices

Experimental Analysis of Punch-Through Conditions in Power $P$-$I$-$N$ Diodes

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