2002
DOI: 10.1364/ol.27.000909
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Erbium fiber laser–pumped continuous-wave microchip Cr^2+:ZnS and Cr^2+:ZnSe lasers

Abstract: Efficient continuous-wave (cw) lasing of Cr(2+):ZnS and Cr(2+):ZnSe crystals in external hemispherical cavities and in a microchip configuration under Er-fiber-laser pumping at room temperature are reported. The key result is what is believed to be the first successful demonstration of cw Cr(2+):ZnS and Cr(2+):ZnSe microchip lasers with maximum output powers of 63 and 100 mW at 2320 and 2520 nm, with slope efficiencies of 53% and 20%, respectively.

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Cited by 95 publications
(55 citation statements)
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“…ZnSe is ideal material for blue-green laser diodes [1] [2], mid-IR laser sources for remote sensing applications [5], and in optically controlled switching devices due to its large photo resistivity [6]. Zinc selenide thin films had been fabricated by photochemical deposition (PCD) [7], chemical bath deposition (CBD) [8] [9] and electrochemical deposition (ECD) [10], but all these methods have Materials Sciences and Applications their own drawbacks including higher annealing temperatures for PCD, controlling rate of reaction for CBD and the use of only conductive substrates for ECD [7].…”
Section: Introductionmentioning
confidence: 99%
“…ZnSe is ideal material for blue-green laser diodes [1] [2], mid-IR laser sources for remote sensing applications [5], and in optically controlled switching devices due to its large photo resistivity [6]. Zinc selenide thin films had been fabricated by photochemical deposition (PCD) [7], chemical bath deposition (CBD) [8] [9] and electrochemical deposition (ECD) [10], but all these methods have Materials Sciences and Applications their own drawbacks including higher annealing temperatures for PCD, controlling rate of reaction for CBD and the use of only conductive substrates for ECD [7].…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, subject to a proper orientation, the CW output power of 700 mW at 2.35 m with 700 nm wavelength tuning were demonstrated using Cr:ZnS single crystal as a laser active element [14]. Subsequently, the laser action in microchip configuration [15], picosecond passive mode-locking [16] and finally, femtosecond SESAM-initiated mode-locking was obtained in 2011 with 1.2 nJ 110 fs pulses [17]. The CW output power of 10 W was obtained recently using polycrystalline Cr:ZnS as an active element [18].…”
mentioning
confidence: 99%
“…ZnSe is particularly suitable for short-wavelength optoelectronic device applications including bluegreen laser diodes 16 and tunable mid-IR laser sources for remote sensing. 17 Recently one-dimensional (1D) nanostructures of ZnSe such as nanowires, nanorods, nanobelts, nanoribbons, nanoneedles, have been synthesized using various techniques including metal-organic chemical vapor deposition…”
Section: 15mentioning
confidence: 99%