Efficient continuous-wave (cw) lasing of Cr(2+):ZnS and Cr(2+):ZnSe crystals in external hemispherical cavities and in a microchip configuration under Er-fiber-laser pumping at room temperature are reported. The key result is what is believed to be the first successful demonstration of cw Cr(2+):ZnS and Cr(2+):ZnSe microchip lasers with maximum output powers of 63 and 100 mW at 2320 and 2520 nm, with slope efficiencies of 53% and 20%, respectively.
Demonstrations of CW and pulsed microchip lasing in Cr 2þ : ZnS and Cr 2þ : ZnSe crystals are reported. Slope efficiencies up to 53% with output power up to 150 mW for CW and energy up to 1 mJ for pulsed pumping were achieved. Two compact diode and Er fibre laser directly pumped external cavity Cr 2þ : ZnS lasers are also described.
Crystal preparationBulk Cr 2þ : ZnS crystals can be obtained from melt [14] or vapour growth techniques [14] by including the dopant in the starting charge. Under atmospheric pressure ZnS is sublimed at a temperature higher than about 1180 8C before melting [15]. Therefore for melt growth, in addition to high temperature (1950 8C), it is necessary to apply high q IEE, 2003
8.9 GHz 10 K EPR studies of three Low-symmeby cenhs in x-irradiated &on are reported. Precise spin-Hamiltonian parameters are given for a Z?+ centre. including 91Zr hypenine and 89Y superhyperfine matrices, where the ideal letragod symmetry of the Z r site is lowered by charge compensator0) to Laue class i. Precise g-values are given for two previously unreported electron-hole centres shown to be located respectively al short-and long-bonded 0ligand sifes. each of Laue class Um, monoclinic.
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