No abstract

No abstract

No abstract

Recent progress in chromium and iron doped II-VI semiconductor materials makes them the laser sources of choice when one needs a compact system with tunability over 1.9-5.1 μm. Output powers exceeding 10 W and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable laser systems. This article reviews transition metal doped II-VI materials and recent progress in Cr-and Fe-doped solid-state mid-IR lasers.Critical areas driving future progress in Cr-and Fe-doped chalcogenide middle infrared lasers: fabrication of binary and ternary II-VI ceramic gain media with low phonon cut-off, low optical losses and high design flexibility; high performance laser design with improved characteristics in power (power scaling to dozens of Watts), spectral (spectral coverage over 1.8-6 μm), temporal (frequency comb generation), and pump domains (electrically pumped Cr-and Fe-doped II-VI quantum confined structures).