Tunable middle infrared downconversion in GaSe and AgGaS2

Okorogu, Albert O.; Mirov, Sergey; Lee, W; Crouthamel, Daniel Ivan; Jenkins, N.W.; Dergachev, Alex; Vodopyanov, K.; Badikov, V. V.

doi:10.1016/s0030-4018(98)00397-6

Cited by 209 publications

(151 citation statements)

References 5 publications

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“…Recently, many promising NLO materials have been discovered and have basically solved the demand of UV region . However, for the IR region, outstanding IR NLO materials were rarely discovered and only several ternary diamond-like semiconductors (DLSs), such as AgGaS 2 , AgGaSe 2 and ZnGeP 2 , have been commercially used [35][36][37]. Although they have high second harmonic generation (SHG) coefficients and wide IR transmission regions, some of the self-defects including the low laser-damage thresholds (LDTs) or strong two-photon absorption (TPA) still seriously hinder their practical application.…”

Section: Introductionmentioning

confidence: 99%

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Pan

2017

Crystals

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Abstract:A new family of quaternary diamond-like semiconductors (DLSs), Li 2 HgMS 4 (M = Si, Ge, Sn), were successfully discovered for the first time. All of them are isostructural and crystallize in the polar space group (Pmn2 1 ). Seen from their structures, they exhibit a three-dimensional (3D) framework structure that is composed of countless 2D honeycomb layers stacked along the c axis. An interesting feature, specifically, that the LiS 4 tetrahedra connect with each other to build a 2D layer in the ac plane, is also observed. Experimental investigations show that their nonlinear optical responses are about 0.8 for Li 2 HgSiS 4 , 3.0 for Li 2 HgGeS 4 , and 4.0 for Li 2 HgSnS 4 times that of benchmark AgGaS 2 at the 55-88 µm particle size, respectively. In addition, Li 2 HgSiS 4 and Li 2 HgGeS 4 also have great laser-damage thresholds that are about 3.0 and 2.3 times that of powdered AgGaS 2 , respectively. The above results indicate that title compounds can be expected as promising IR NLO candidates.

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Section: Introductionmentioning

confidence: 99%

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Pan

2017

Crystals

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“…Recently, numerous famous NLO crystals have been discovered and have effectively solved the generation of UV-visible light [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. However, for the mid-far infrared (IR) region (3-20 µm), outstanding IR NLO materials have been discovered less, and only a few (chalcopyrites AgGaS 2 , AgGaSe 2 , and ZnGeP 2 ) have been commercially applied [23][24][25]. Note that some of the self-defects hinder their future development (especially for high-energy laser system), such as low laser-damage thresholds (LDTs) for AgGaS 2 and AgGaSe 2 , and serious two-photon absorption (TPA) for ZnGeP 2 .…”

Section: Introductionmentioning

confidence: 99%

A High Laser Damage Threshold and a Good Second-Harmonic Generation Response in a New Infrared NLO Material: LiSm3SiS7

Zhen

Nian

et al. 2016

Crystals

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A series of new infrared nonlinear optical (IR NLO) materials, LiRe 3 MS 7 (Re = Sm, Gd; M = Si, Ge), have been successfully synthesized in vacuum-sealed silica tubes via a high-temperature solid-state method. All of them crystallize in the non-centrosymmetric space group P6 3 of the hexagonal system. In their structures, LiS 6 octahedra connect with each other by sharing common faces to form infinite isolated one-dimensional ∞ [LiS 3 ] n chains along the 6 3 axis. ReS 8 polyhedra share edges and corners to construct a three-dimensional tunnel structure with ∞ [LiS 3 ] n chains located inside. Remarkably, LiSm 3 SiS 7 shows promising potential as one new IR NLO candidate, including a wide IR transparent region (0.44-21 µm), a high laser damage threshold (LDT) (3.7 × benchmark AgGaS 2 ), and a good NLO response (1.5 × AgGaS 2 ) at a particle size between 88 µm and 105 µm. Dipole-moment calculation was also used to analyze the origin of NLO responses for title compounds.

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“…This work has included direct generation in semiconductors using InAsSbP/InAsSb/InAs [1] and quantum cascade lasers [2][3][4]. Mid-IR wavelengths have also been generated using nonlinearities in optical parametric oscillators (OPOs) and difference frequency generators (DFGs) [5][6][7]. All of these approaches yield tunable sources in the mid-IR.…”

Section: Introductionmentioning

confidence: 99%

En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors

Fedorov

Gallian

Moskalev

et al. 2007

Journal of Luminescence

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Tunable middle infrared downconversion in GaSe and AgGaS2

Cited by 209 publications

References 5 publications

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

A High Laser Damage Threshold and a Good Second-Harmonic Generation Response in a New Infrared NLO Material: LiSm3SiS7

En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors

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