2015
DOI: 10.1109/jstqe.2014.2346512
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Progress in Mid-IR Lasers Based on Cr and Fe-Doped II–VI Chalcogenides

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Cited by 335 publications
(168 citation statements)
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“…In the mid infrared, Cr-and Fe-doped ZnS-or ZnSe-based solid state lasers can provide average output powers in excess of 10-W tunable in broad ranges of 2 to 3 μm and 100s mW, from 3.7 to 5.00 μm, respectively, 152 although the operation of the latter Fe-doped lasers was at cryogenic temperatures. Extended coverage throughout the molecular fingerprint region can alternatively be achieved using quantum cascade lasers 153 and although operational powers at the watt level is achievable, cryogenic Fig.…”
Section: Wavelength Tunable Mid-infrared Generation Via Difference Frmentioning
confidence: 99%
“…In the mid infrared, Cr-and Fe-doped ZnS-or ZnSe-based solid state lasers can provide average output powers in excess of 10-W tunable in broad ranges of 2 to 3 μm and 100s mW, from 3.7 to 5.00 μm, respectively, 152 although the operation of the latter Fe-doped lasers was at cryogenic temperatures. Extended coverage throughout the molecular fingerprint region can alternatively be achieved using quantum cascade lasers 153 and although operational powers at the watt level is achievable, cryogenic Fig.…”
Section: Wavelength Tunable Mid-infrared Generation Via Difference Frmentioning
confidence: 99%
“…An alternative simpler approach is the direct development of mid-IR ultrafast oscillators. Bulk transition-metal doped II-VI semiconductors such as chromium-and iron-doped sulfide and selenide offer direct access to the 2-6 µm region, but while 46 fs pulses have been reported from mode-locked Cr:ZnS systems, such pulse generation has only been demonstrated thus far up to ∼2.4 µm [7].One highly promising route is the recent emergence of ultrafast rare-earth-doped fluoride fiber lasers, which bring the benefits of fiber laser technology (compact setups, simple thermal management, high beam quality etc.) to the mid-IR region.…”
mentioning
confidence: 99%
“…An alternative simpler approach is the direct development of mid-IR ultrafast oscillators. Bulk transition-metal doped II-VI semiconductors such as chromium-and iron-doped sulfide and selenide offer direct access to the 2-6 µm region, but while 46 fs pulses have been reported from mode-locked Cr:ZnS systems, such pulse generation has only been demonstrated thus far up to ∼2.4 µm [7].…”
mentioning
confidence: 99%
“…Features of II-VI semiconductor hosts (wide bandgap, low phonon cutoff, tetrahedral coordination) are very favorable for doping by TM ions. Chemically stable divalent TM dopant ions provide the 'right' multiplet structure for broadly tunable MIR lasers, including broad absorption and emission bands, high cross-sections, and absence of excited state absorption.ZnS and ZnSe doped with Cr 2+ and Fe 2+ are typical and the best known representatives of the large TM:II-VI family, as reviewed in [2]. Advantages of Cr:ZnS and Cr:ZnSe lasers include room-temperature (RT) operation with close to 100 % quantum efficiency, very broad tuning over 1.9 -3.4 µm range, and convenient pumping by reliable erbium (Er) and thulium (Tm) fiber lasers with pump conversion efficiency in excess of 60 %.…”
mentioning
confidence: 99%
“…ZnS and ZnSe doped with Cr 2+ and Fe 2+ are typical and the best known representatives of the large TM:II-VI family, as reviewed in [2]. Advantages of Cr:ZnS and Cr:ZnSe lasers include room-temperature (RT) operation with close to 100 % quantum efficiency, very broad tuning over 1.9 -3.4 µm range, and convenient pumping by reliable erbium (Er) and thulium (Tm) fiber lasers with pump conversion efficiency in excess of 60 %.…”
mentioning
confidence: 99%