Synthesis and Characterization of SiO₂-Sheathed ZnSe Nanowires

Abstract

ZnSe/SiO2 coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of SiO2. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/ SiO2 coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the SiO2-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

“…The application of polycrystalline non-lattice-matched thin films for free-space electro-optic sampling (FS-EOS) has opened the possibility of utilizing integrated THz FS-EOS sensors and generators. In the course of time, tetrapod-branched ZnSe nanorod architectures, 54 ZnSe nanoflowers, 55 Zn x Cd 1-x Se nanomultipods with tunable band gaps, 56 and ZnSe based semiconductor core-shell composites [57][58][59][60] inclusive well-aligned ZnSe/ZnO core/shell nanowire arrays 59 prepared by conventional chemical vapor deposition, thermal evaporation, hot injection, and hydrothermal methods were assembled as photocatalysts, light emitters, solar cells, and photodetectors.…”