Epitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM) des solutions solides ternaires Ga1-xAl xSb, Ga1-xInxSb et GaAsySb1-y sur substrats de GaSb

MOVPE growth of antimonide-containing alloy materials for long wavelength applications

“…Stringfellow and others presented thermodynamic calculations of the phase stability of several quaternary systems [11][12][13], indicating that many such systems, particularly alloys containing Sb, exhibit large miscibility gaps over broad ranges of alloy composition. Previous MOVPE studies have shown that in the case of thick GaAs 1Ày Sb y films arsenic is incorporated preferentially over antimony [14,15] under most growth conditions.…”