GaSb heterostructures grown by MOVPE

Chidley, E. T. R.; Haywood, S. K.; Mallard, R. E.; Mason, N.J.; Nicholas, R.J.; Walker, P.J.; Warburton, R. J.

doi:10.1016/0022-0248(88)90508-8

Cited by 46 publications

(12 citation statements)

References 22 publications

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“…The major difficulty in OMVPE growth of AlSb-containing materials is C contamination, which results from the strong affinity of Al for C [36]. The use of conventional methyl-based OM sources such as trimethylaluminum is especially problematic since the levels of C, which is a p-type impurity, is as high as ~ 1 x 10 18 cm -3 even for alloys that contain only about 20% Al [37,38]. Corresponding hole mobility was less than 200 cm 2 /V-s.…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…Furthermore, the hole concentration could not be compensated by n-type dopants [37], thus precluding p-n heterostructure devices. C incorporation is further exacerbated by the use of TMSb, which generates methyl radicals; the lack of H radicals, which can mitigate C incorporation; and the necessity to use low V/III ratios.…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…This variability in source purity has further impeded progress in growth of AlSb-containing alloys. Furthermore, it has been difficult to measure electrical properties of AlSb-containing alloys because high levels of O make the alloy semiinsulating [37,43].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…In [37,38]). The use of TEGa and TMAAl resulted in a hole concentration as low as 9.4 x 10 17 cm -3 (no mobility value was reported) [43].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…The use of conventional methyl-based OM sources such as trimethylaluminum is especially problematic since the levels of C, which is a p-type impurity, is as high as ~ 1 x 10 18 cm -3 even for alloys that contain only about 20% Al [37,38]. Corresponding hole mobility was less than 200 cm 2 /V-s.Furthermore, the hole concentration could not be compensated by n-type dopants [37], thus precluding p-n heterostructure devices. C incorporation is further exacerbated by the use of TMSb, which generates methyl radicals; the lack of H radicals, which can mitigate C incorporation; and the necessity to use low V/III ratios.…”

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confidence: 99%

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Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

Wang

2004

Journal of Crystal Growth

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This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed.Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices. 2 IntroductionGaSb-based III-V semiconductor alloys are attractive for optoelectronic devices such as midinfrared lasers, detectors, and thermophotovoltaics (TPVs); and electronic devices such as highspeed transistors and resonant-tunneling diodes [1]. Alloys of particular interest are based on the binaries GaSb, AlSb, InSb, GaAs, AlAs, and InAs. As shown in Fig. 1 GaSb-based heterostructures have been successfully grown by all of the major epitaxial techniques, including liquid phase epitaxy, molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (OMVPE). While each of these technologies must contend with numerous challenges that are specific to the method of choice, several fundamental issues related to Sbcontaining III-V alloys exist. These include the low volatility of Sb compared to P-and Asbased alloys, which necessitates stringent control of V/III ratio; the requirement to use low growth temperatures (450 to 600 °C); the existence of a large solid phase miscibility gap for many Sb-containing alloys; and the affinity of AlSb-based alloys to incorporate O and C. As a consequence, growth of Sb-based alloys differs significantly from the more conventional As-and P-based materials, which certainly has made the development of the GaSb-based materials and devices very challenging.This paper discusses both the fundamental and practical issues associated with the growth of mid-IR GaSb-based III-V alloys grown by OMVPE, and briefly reviews approaches that have been explored to further improve the properties and performance of bulk layers as well as heterostructures. Growth considerations include the importance of suitable organometallic precursors and control of V/III ratio; miscibility gaps in ternary and quaternary alloys; C and O contamination in AlSb-based alloys; in-situ monitoring; GaSb substrate quality and preparation;and heterostructure growth. Recent materials and device results are limited to GaInAsSb and 3 AlGaAsSb alloys grown lattice matched to GaSb, since two comprehensive reviews on OMVPE growth of Sb-based materials were recently published [5,6]. Growth considerations and brief review of previous work Fundamental differences between Sb-based and P-or As-based III-V alloysOne of the early premises of OMVPE growth of III-V semiconductors was the utilization of precursors based on group III organometallics a...

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Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…In [37,38]). The use of TEGa and TMAAl resulted in a hole concentration as low as 9.4 x 10 17 cm -3 (no mobility value was reported) [43].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

mentioning

confidence: 99%