Temperature dependence of solid-vapor compositional relation in epitaxial growth of GaAsxSb1-x by low-pressure metalorganic chemical vapor deposition

Growth of strained GaAsSb layers on GaAs (001) by MOVPE

“…Doubling the V/III ratio led to a small decrease in Sb incorporation, which somehow disagrees with Ref. [7]. However, this might be due to different Ga and As precursors (tri-ethyl gallium (TEGa) and tertiarybutyl arsine (tBAs)) in that study.…”

“…The few studies available on MOVPE growth of GaAsSb on GaAs indicate that a rather low arsine partial pressure is needed to achieve at least a small Sb incorporation [3][4][5][6][7][8]. Bedair et al [5] especially noted that the arsine partial pressure was the crucial parameter, rather than the TMSb partial pressure.…”

“…The ternary GaAs 0:53 Sb 0:47 is lattice matched to InP 11.420 and mostly used for solar cell or hetero-bipolar transistor applications. For the growth of strained GaAsSb layers on GaAs the need for low V/III ratios to achieve reasonable Sb incorporation was already emphasised in previous works [3][4][5][6][7][8].…”

Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices

“…The metal-organic vapor-phase epitaxy (MOVPE) of both these materials is complicated by their metastability since the compositions of technological interest are within the miscibility gap over the respective alloy phase diagrams [2,3,4]. Previous MOVPE studies have shown that in the case of thick GaAs 1Ày Sb y films arsenic is incorporated preferentially over antimony [5] under most growth conditions. Growth conditions, such as low V/III ratios combined with high Sb/As ratios are typically required to achieve high antimony content in the solid film [2].…”

Growth of strained GaAs1−ySby layers using metalorganic vapor phase epitaxy

“…The epitaxial growth of strain-relaxed GaAs 1Ày Sb y layers on InP and GaAs substrates using MOVPE has been extensively studied [8,22,[24][25][26][27]. The Sb-incorporation efficiency for the MOVPE growth of GaAs 1Ày Sb y is determined by the concerted interaction between various thermodynamic and kinetic phenomena at the growth surface.…”