Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices

Hawkins, Brian; Khandekar, A. A.; Yeh, Jeng-Ya; Mawst, Luke J.; Kuech, T. F.

doi:10.1016/j.jcrysgro.2004.08.045

Cited by 14 publications

(16 citation statements)

References 25 publications

(34 reference statements)

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“…Good agreement was also obtained for a series of type-I GaAs/ GaAsSb SLs emitting at wavelengths in the 1.0-1.2 m range. 21 Furthermore, the calculated energy gap of 1043 nm for a 6 nm GaAs 0.975 N 0.025 QW surrounded by thick GaAs barriers reproduced closely the experimental PL peak. The simulated peak positions, taken together with the PL data in Figs.…”

Section: Resultssupporting

confidence: 65%

“…The optimal gasswitching sequence for reproducibly inducing minimal Sb compositional grading in the GaAsSb layers of pseudomorphic GaAs-GaAs 0.8 Sb 0.2 SLs was established in a separate study. 21 Four periods of a GaAs 0.78 Sb 0.22 / GaAs 0.978 N 0.022 type II SL were grown using the above-mentioned optimized conditions. XRD -2 scans and dynamical simulations were used to determine the layer thicknesses and compositions, and transmission electron microscopy ͑TEM͒ was performed in cross section to confirm the layer thicknesses.…”

Section: -2mentioning

confidence: 99%

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Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Khandekar

Hawkins

Kuech

et al. 2005

Journal of Applied Physics

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Pseudomorphic four-period GaAs 0.978 N 0.022 / GaAs 0.78 Sb 0.22 type-II multiquantum well structures were grown on ͑100͒ GaAs substrates by metalorganic vapor phase epitaxy at 530°C. The GaAs 0.978 N 0.022 layers were grown at a V/III ratio of 685 and N / V ratio of 0.96, whereas the GaAs 0.78 Sb 0.22 was grown at a V/III ratio of 3.8 and Sb/ V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 scans around the ͑400͒ GaAs peak were fitted using a dynamical simulation model to determine layer thickness and alloy compositions. The GaAsN and GaAsSb thicknesses were ϳ8 nm and ϳ5 nm, respectively. The photoluminescence ͑PL͒ spectra were obtained at 30 K and the PL peak energy was found to match the type-II transition energy obtained from a 10-band k · p model. Postgrowth annealing under arsine-H 2 with a N 2 cooldown was found to increase the low temperature PL intensity and result in the appearance of luminescence at room temperature.

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Section: Resultssupporting

confidence: 65%

Section: -2mentioning

confidence: 99%

Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Khandekar

Hawkins

Kuech

et al. 2005

Journal of Applied Physics

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“…The growth of GaAs 1Ày Sb y films using metalorganic vapor phase epitaxy (MOVPE) is complicated due to the thermodynamic miscibility gap in the GaAs-GaSb phase diagram [8,9] and the Sb-surface segregation phenomena [10]. The Sb-incorporation efficiencies in pseudomorphically strained GaAs 1Ày Sb y layers grown on GaAs substrates are further constrained by the strain-induced lattice-latching effect [11,12]. The Sb-mole fraction in the strained GaAs 1Ày Sb y layers grown using trimethyl gallium (TMGa), trimethyl antimony (TMSb) and arsine was reported to be limited to y ¼ 0.2, while the strain-relaxed films with Sb-mole fractions up to yffi0.4 were obtained under identical growth conditions [11].…”

Section: Introductionmentioning

confidence: 99%

Growth of strained GaAs1−ySby layers using metalorganic vapor phase epitaxy

Khandekar

Yeh

Mawst

et al. 2007

Journal of Crystal Growth

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“…The high Sb-content is required to achieve a large valence band offset and therefore long wavelength emission. To improve the interface between GaAsSb and GaAs, special care must be taken during the gas switching [12]. At the GaAs-toGaAsSb interface, AsH 3 and TMSb was applied for a duration of 5 s in order to establish the presence of the antimony precursor, followed by the introduction of TMGa, i.e., the onset of GaAsSb layer growth.…”

Section: Introductionmentioning

confidence: 99%