Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Temperature effect on the growth of strained GaAs1−Sb /GaAs (y>0.4) quantum wells by MOVPE

“…GaAsSb/ GaAs type-II quantum well (QW) is one of the promising materials as the gain medium for 1.3 mm application because of the special band alignment [1]. To extend the emission wavelength to the 1.55 mm region, the InGaAsN alloys were used as the barrier layer for electron confinement in InGaAsN/GaAsSb QW [2]. However, the conventional growth temperature of GaAsSb alloys on GaAs substrates by MOVPE were far from InGaAsN alloys.…”

Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates

“…A design study of a dilute-nitride In(Ga)AsN/GaAs 1Ày Sb y type-II ''W'' QW structure on an InP substrate for emission in the 2-5 mm range was proposed [7]. However, the MOVPEbased growth of these materials remains quite challenging because of the observed reduction in N incorporation into InGaAs(N) alloys at high indium compositions [8][9][10]. Recently, InP-based GaAs 1ÀyÀz Sb y N z /GaAs 1Ày Sb y type-II QW structures have been investigated for light emission over the 2-3 mm wavelength region through the MOVPE growth technique [11].…”

Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

“…High-performance InGaAsNactive diode lasers that emit wavelengths at 1.3-1.32 mm have been fabricated using the MOCVD techniques [1][2][3]. However, laser emission in MOCVD-grown samples at 41.4 mm remains challenging in this alloy system because of the diminished N incorporation in alloys with high In concentrations [4]. Furthermore, increased N incorporation, when successful, generally is accompanied by degradations of device performance [5,6], possibly due to the formation of In-N clusters, fluctuations in the well width, and/or local strains induced by the presence of N [7].…”