Epitaxial growth of SiGe layers for BiCMOS applications

Régolini, J. L.; Pejnefors, J.; Baffert, T.; Morin, Christine; Ribot, P.; Jouan, S.; Marty, M.; Chantre, A.

doi:10.1016/s1369-8001(98)00025-0

Cited by 8 publications

(6 citation statements)

References 12 publications

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“…Currently, chip manufacturers focus mainly on the integration of Si 1Ϫx Ge x in heterojunction bipolar transistors ͑HBT͒ in Bi complementary metal oxide semiconductor ͑BiCMOS͒ technology. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] In a next phase, attention goes to the fabrication of Si/Si 1Ϫx Ge x heterojunction CMOS devices to improve the performance of the p-type metal oxide semiconductor ͑MOS͒ device, [16][17][18][19][20][21][22][23][24] and to elevated Si 1Ϫx Ge x source/drain contacts to reduce short channel effects in CMOS technology. [25][26][27][28][29] For the first two applications, both selective and nonselective epitaxial growth by means of chemical vapor deposition ͑CVD͒ can be used.…”

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confidence: 99%

“…In nonselective epitaxial growth on patterned wafers, deposition occurs simultaneously in the Si windows ͑epitaxial growth͒ and on the mask material ͑polycrystalline growth͒. 1,6,30 In selective epitaxial growth ͑SEG͒, deposition on the mask material is prevented by adding HCl to the gas mixture in appropriate deposition conditions. 1,[29][30][31][32][33] The top layer of the mask material can be oxide or nitride.…”

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confidence: 99%

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Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

Loo

Caymax

Peytier

et al. 2003

J. Electrochem. Soc.

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Si 1Ϫx Ge x /Si heterostructures are useful for numerous device applications where device performance is improved by band offsets and/or increased carrier mobility. The use of selective epitaxial growth for the implementation of Si 1Ϫx Ge x has some advantages compared to a nonselective growth process. However, some issues such as thickness nonuniformity ͑microloading on a micrometer scale and gas depletion on a wafer scale͒ and facet formation must be solved. In this paper, we give a detailed overview of our selective Si 1Ϫx Ge x growth process in a standard production-oriented chemical vapor deposition system for Ge contents between 0 and 32%. Our process allows layer deposition with no pattern dependence of the growth rate and Ge content ͑no microloading͒ and with a wafer scale layer nonuniformity that is better than the accuracy of the measurement techniques (ϳ2%). Facet formation was avoided by choosing the correct growth conditions and by preventing lateral growth over the mask material. Selective epitaxial layers did not show a degradation of photoluminescence characteristics. The layer quality is further demonstrated by the performance of Si 1Ϫx Ge x heterojunction bipolar transistors ͑0.35 and 0.25 m technology͒, and p-type Si 1Ϫx Ge x heterojunction metal oxide semiconductor devices ͑effective gate length down to 70 nm͒.

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confidence: 99%

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confidence: 99%

Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

Loo

Caymax

Peytier

et al. 2003

J. Electrochem. Soc.

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“…Caymax and Decoutere [44] and Regolini, Ribot and coworkers [45,48] have studied the stability of CVD-grown SiGe layers. Caymax and Decoutere [44] fabricated two samples.…”

Section: Stability 231mentioning

confidence: 99%

“…The maximum effective strains in the three layers were 0.20, 0.26 and 0.35%. After thermal treatment (900-1000 • C for up to 30 min [48]) only one layer with 0.35% strain was found to contain dislocations.…”

Section: Stability 231mentioning

confidence: 99%

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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“…For the best heterojunction, several conditions are required. 6 ͑i͒ proper x composition, ͑ii͒ a perfect crystalline but strained structure ͑dislocation free͒, while retaining ͑iii͒ perfect spatial uniformity. This is even more important for the new generation of 300mm-diam silicon wafers.…”

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Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures

Ferrieu¹

2000

Applied Physics Letters

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Epitaxial growth of SiGe layers for BiCMOS applications

Cited by 8 publications

References 12 publications

Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

Successful Selective Epitaxial Si[sub 1−x]Ge[sub x] Deposition Process for HBT-BiCMOS and High Mobility Heterojunction pMOS Applications

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures

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