Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices

Seki, Akinori; Konushi, F.; Kudo, J.; Koba, Masayoshi

doi:10.1016/0022-0248(88)90578-7

Cited by 17 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although InP is epitaxially grown to combine it with other material wafers, − this method is unsuitable owing to lattice mismatch and thermal expansion mismatch. − Therefore, the direct bonding of wafers has attracted considerable research attention in recent years. Several groups have already attempted the direct bonding of InP to Si wafers by virtue of hydrophobic and hydrophilic bonding.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Zhang,

Murakami,

Takigawa

2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In this study, we investigated the room-temperature wafer bonding of indium phosphide (InP) and its atomic-scale bond interface formation. The direct bonding of InP/InP wafers via surface-activated bonding (SAB) and room-temperature bonding involving an activated Si atomic layer was compared. Particularly, the bond strength, surface morphology, and atomic structure in the bond interface were investigated. In contrast to SAB, the bonding involving the activated Si atomic layer afforded more than 2-fold increase in bond strength. This is because, unlike that in SAB, the InP surface was not directly irradiated by an Ar fast atomic beam; instead, a layer of activated Si atoms was deposited. Consequently, the surface roughness of the wafers was lower than that obtained using SAB. The atomic structure of the wafer surface was maintained after activation, and atomic contact between the wafers was achieved. The diffusion of In and P into the Si atomic layers affected the bond strength, indicating that the InP–InP bonding in the wafers through an activated Si atomic layer was different from the simple bonding of two Si bulks. Notably, the state of the bond interface obtained via SAB was different from that obtained via SAB of other semiconductor materials. The room-temperature bonding method will be significantly useful in the development of fabrication techniques for the heterogeneous integration of InP-based electronics and photonics.

show abstract

Section: Introductionmentioning

confidence: 99%

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Zhang,

Murakami,

Takigawa

2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…There are, however, serious problems to overcome, such as large mismatches in lattice constant and thermal expansion coefficient with Si. It has been reported that successful heteroepitaxy of InP on Si has usually been achieved by inserting thin GaAs [2], InP/GaAs [3] or InAsP/InP superlattice [4] layer as an intermediate buffer layer. Especially, lattice strain increases with increasing growth area in the heteroepitaxy [5].…”

Section: Introductionmentioning

confidence: 99%

Selective area growth of InP on nano-patterned SiO<inf>2</inf>/Si(100) substrates by molecular beam epitaxy

Hasegawa

Yamano

Ahn

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

View full text Add to dashboard Cite

We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO 2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress-and defect-free InP regions on SiO 2 towards the application to next generation MOSFETs as the channel materials.

show abstract

“…However, there are serious problems to overcome, such as large lattice mismatch with Si (about 8%). It has been reported that successful heteroepitaxy of InP on Si has usually been achieved by inserting thin GaAs [4], InP/GaAs [5] or InAsP/InP superlattice [6] layer as an intermediate buffer layer. Especially, lattice strain increases with increasing growth area in the heteroepitaxy [7].…”

Section: Introductionmentioning

confidence: 99%

Selective growth of InP on areas (1μm×1μm) of silicon (100) substrate by molecular beam epitaxy

Araki

Hasegawa

Asahi

2008

2008 20th International Conference on Indium Phosphide and Related Materials

View full text Add to dashboard Cite

To use 111-V compound semiconductors as channel materials in the future advanced MISFETs with high performance, it is important to achieve the growth of III-V-on-Insulator structures on Si substrates. As a first step to accomplish this, we propose the selective formation of InP only on localized areas of Si (100) substrate by molecular beam epitaxy (MBE). It was found that InP was selectively grown only on bare Si window areas, while not grown on native silicon oxide areas at elevated substrate temperature (500°C). It was also found that by decreasing the window size (0.7xO.7 pm 2 ) only single grain of InP was grown on each bare Si window area. This indicates that the selective MBE growth of InP on Si substrate is possible.

show abstract

Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices

Cited by 17 publications

References 10 publications

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Selective area growth of InP on nano-patterned SiO<inf>2</inf>/Si(100) substrates by molecular beam epitaxy

Selective growth of InP on areas (1μm×1μm) of silicon (100) substrate by molecular beam epitaxy

Contact Info

Product

Resources

About

Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices

Cited by 17 publications

References 10 publications

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface

Selective area growth of InP on nano-patterned SiO<inf>2</inf>/Si(100) substrates by molecular beam epitaxy

Selective growth of InP on areas (1&#x03BC;m&#x00D7;1&#x03BC;m) of silicon (100) substrate by molecular beam epitaxy

Contact Info

Product

Resources

About

Selective growth of InP on areas (1μm×1μm) of silicon (100) substrate by molecular beam epitaxy