Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface
Gufei Zhang,
Seigo Murakami,
Ryo Takigawa
Abstract:In this study, we
investigated the room-temperature wafer bonding
of indium phosphide (InP) and its atomic-scale bond interface formation.
The direct bonding of InP/InP wafers via surface-activated bonding
(SAB) and room-temperature bonding involving an activated Si atomic
layer was compared. Particularly, the bond strength, surface morphology,
and atomic structure in the bond interface were investigated. In contrast
to SAB, the bonding involving the activated Si atomic layer afforded
more than 2-fold increase… Show more
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