Selective area growth of InP on nano-patterned SiO<inf>2</inf>/Si(100) substrates by molecular beam epitaxy

Abstract

We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO 2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because of the difference in thermal expansion coefficient between Si and InP. This clearly shows that the growth of one InP single crystallite for each Si opening is indispensable for growing stress-and defect-free InP regions on SiO 2 towards the application to next generation MOSFETs as the channel materials.

A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices

“…Other schemes that have been developed to improve epilayer quality involve thermal annealing [20], growth on patterned Si substrates [21], [22] Though the device performances were comparable, the thick buffer layers puts up additional cost in device fabrication and increases the device dimensions. The correlation between quality of active epitaxial layers and buffer thickness has been studied by M.K.…”