Epitaxial growth of InN films on lattice-matched EuN buffer layers

Shimomoto, Kazuma; Ohta, Jitsuo; Fujii, Tomoaki; Ohba, R.; Kobayashi, Atsushi; Oshima, Masaharu; Fujioka, Hiroshi

doi:10.1016/j.jcrysgro.2009.08.020

Cited by 9 publications

(12 citation statements)

References 18 publications

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“…However, reducing the growth temperature usually leads to degradation in crystal quality. In order to overcome this problem, the development of an epitaxial growth technique that gives high quality films even at low temperatures is being vigorously pursued 15–20. Quite recently, we found that a family of high quality semipolar InN films, characterized by the indices ($1\bar {1}0l$ ), can be grown on yttria stabilized zirconia (YSZ) substrates 21.…”

Section: Introductionmentioning

confidence: 99%

Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

Fujii

Kobayashi

Ohta

et al. 2010

Physica Status Solidi (a)

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We report on the growth of semipolar InN ($11\overline {2} l$) films on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition. We found that the growth orientation can be precisely controlled by utilizing the tendency for the epitaxial relationships of InN [0001] || YSZ [111] and InN [$11\overline {2} 0$] || YSZ [$1\overline {1} 0$] to be maintained. The full‐width at half‐maximum of the $11\overline {2} 6$ X‐ray rocking curves for an InN ($11\overline {2} 7$) film varies from 0.61 to 0.46° depending on the X‐ray angle of incidence.

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Section: Introductionmentioning

confidence: 99%

Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

Fujii

Kobayashi

Ohta

et al. 2010

Physica Status Solidi (a)

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“…Meanwhile, when growing the cubic IIInitrides by MBE, hexagonal III-nitrides will be mixed into the cubic films, and therefore its phase purity of the as-grown film is damaged [101]. In order to solve these problems, PLD is deployed to grow high-quality group III-nitride films on MgO substrates [40][41][42]102,103].…”

Section: Group Iii-nitride Films On Mgo Substrates By Pldmentioning

confidence: 99%

“…Shimomoto et al reported that hexagonal InN can be grown on a MgO(111) substrate by PLD [103]. In this case, the lattice-matched EuN film is used as the buffer layer for growth of high-quality InN.…”

Section: Group Iii-nitride Films On Mgo Substrates By Pldmentioning

confidence: 99%

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

127

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“…In addition, calculations for GaN growth on graphene or graphite have yielded a stable solution for N polarity [25][26][27]. It is expected as a buffer layer for high-quality GaN growth [28][29][30]. However, so far, Hf atomic adsorption on graphene has not been studied.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Hf Adatom Adsorption on Graphene Using Density Functional Theory Calculations

Nakada

Torobu

Ishii

2012

e-J. Surf. Sci. Nanotechnol.

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Density functional theory calculations of various atomic species on a graphene sheet are investigated as prototypes for the formation of nanostructures on graphene. These studies discuss the adsorption and migration energy when an adatom is adsorbed on graphene. In this study, we performed calculations regarding the adsorption of Hf atoms on graphene for several different coverages and geometries, because Hf has attracted attention as a buffer layer when a compound is grown on graphene. The calculations were performed for adatoms at three sites having BRIDGE, HOLLOW, or TOP symmetries on 3 × 3 and 2 × 2 supercells for coverages of 0.056, 0.111, 0.167, 0.25, and 0.375. The results indicated that when Hf atoms are adsorbed on the HOLLOW site, the adsorption energy tends to increase, and the subsequent metastable adsorption is a TOP-site adsorption. The most stable structure with a coverage of 0.375 is when two Hf atoms are adsorbed on the TOP site and one Hf atom is adsorbed on the HOLLOW site. Interestingly, the most stable adsorption structure for a coverage of 0.375 is hcp-Hf [0001], the same as that of the surface.

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Epitaxial growth of InN films on lattice-matched EuN buffer layers

Cited by 9 publications

References 18 publications

Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Investigation of Hf Adatom Adsorption on Graphene Using Density Functional Theory Calculations

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