Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Wang, Haiyan

doi:10.1016/j.surfrep.2015.06.001

Cited by 125 publications

(40 citation statements)

References 180 publications

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“…It can be seen that the as-deposited film is mainly composed of very small nanoparticles with a quite dense and smooth surface texture. In addition, there are a few of particulates with different diameters splashed on the samples surface, these particulates deposition is a common disadvantage of pulsed laser deposition [28][29][30]. EDX spectra of the as-deposited SbSn-P thin film indicates that the weight percentage of P in the film is about 4.7 wt.%, which is lower than the weight ratio in the target, possibly due to low vapor pressure of P. The as-deposited films were further characterized by XPS measurements.…”

Section: Methodsmentioning

confidence: 99%

Binder and carbon-free SbSn-P nanocomposite thin films as anode materials for sodium-ion batteries

Pan

Zhang

et al. 2017

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Binder and carbon-free SbSn-P nanocomposite thin films as anode materials for sodium-ion batteries

Pan

Zhang

et al. 2017

Journal of Alloys and Compounds

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“…However, the XRD peak intensity increases as FWHM decreases; this is attributed to the increase in the crystallite size due to either the aggregation of small grains or grain boundary movement during the growth process. Since the FWHM of the XRD diffraction peak is relative to the average crystallite grain size in the film [26], the grain size of GaN grown on the different substrates is calculated using the Debye-Scherer equation [27]:…”

Section: Methodsmentioning

confidence: 99%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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Approximately 4-µm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate's surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 • C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga-Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

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“…20,21 Non-polar optoelectronic device performance has been greatly improved as compared to that of polar optoelectronics devices, with reduction of the efficiency droop. 11,22,23 The density function theory (DFT) predicts that the Fermi level in p-type non-polar GaN is unpinned, 24 which could reduce the contact resistance to p-type GaN. 14 We have previously reported that the Fermi level in n-type non-polar m-plane GaN was pinned close to mid-gap ($2.4 eV above the valence band maximum).…”

Section: Introductionmentioning

confidence: 99%

Interface characterization of atomic layer deposited high-k on non-polar GaN

Jia

Zeng

Singisetti

2017

Journal of Applied Physics

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The interface properties between dielectrics and semiconductors are crucial for electronic devices. In this work, we report the electrical characterization of the interface properties between atomic layer deposited Al2O3 and HfO2 on non-polar a-plane (112¯0) and m-plane (11¯00) GaN grown by hybrid vapor phase epitaxy. A metal oxide semiconductor capacitor (MOSCAP) structure was used to evaluate the interface properties. The impact of annealing on the interface properties was also investigated. The border trap in the oxide, characterized by the capacitance-voltage (C-V) hysteresis loop, was low. The interface state density (Dit), extracted using the ac conductance method, is in the range of 0.5 × 1012/cm2 eV to 7.5 × 1011/cm2 eV within an energy range from 0.2 eV to 0.5 eV below the conduction band minimum. The m-plane GaN MOSCAPs exhibited better interface properties than the a-plane GaN MOSCAPs after annealing. Without annealing, Al2O3 dielectrics had higher border trap density and interface state density compared to HfO2 dielectrics. However, the annealing had different impacts on Al2O3 dielectrics as compared to HfO2. Our results showed that the annealing degraded the quality of the interface in HfO2, but it improved the quality of the interface in Al2O3 devices. The annealing also reduced the positive trapped oxide charge, resulting in a shift of C-V curves towards the positive bias region.

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Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Cited by 125 publications

References 180 publications

Binder and carbon-free SbSn-P nanocomposite thin films as anode materials for sodium-ion batteries

Binder and carbon-free SbSn-P nanocomposite thin films as anode materials for sodium-ion batteries

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Interface characterization of atomic layer deposited high-k on non-polar GaN

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