Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

Abstract

We report on the growth of semipolar InN ($11\overline {2} l$) films on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition. We found that the growth orientation can be precisely controlled by utilizing the tendency for the epitaxial relationships of InN [0001] || YSZ [111] and InN [$11\overline {2} 0$] || YSZ [$1\overline {1} 0$] to be maintained. The full‐width at half‐maximum of the $11\overline {2} 6$ X‐ray rocking curves for an InN ($11\overline {2} 7$) film varies from 0.61 to 0.46° depending on the X‐ray angle of incidence.

Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

“…11) YSZ substrates were successfully applied to the heteroepitaxial growth of A3B5 films. [11][12][13][14] An InN film grown on an YSZ (111) substrate had a high intensity of PL, which, as reported in Refs. 11-14, could be due to its low dislocation density.…”

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

“…InN (0001) grows epitaxially on the (111) face of YSZ, and the lattice mismatch between them is as small as 2.7%. Furthermore, we clarified that arbitrary semipolar plane InN grows epitaxially by changing the plane index of YSZ . Semipolar InN substrates might be useful in suppressing quantum‐confined Stark effects in InGaN quantum wells, which have potential applications in high‐efficiency solar cells and light‐emitting devices.…”

“…Furthermore, we clarified that arbitrary semipolar plane InN grows epitaxially by changing the plane index of YSZ. [17,18] Semipolar InN substrates might be useful in suppressing quantum-confined Stark effects in InGaN quantum wells, [19][20][21] which have potential applications in high-efficiency solar cells and light-emitting devices. The YSZ substrate also makes it possible to grow both In and N-polar (c-plane) InN films.…”

Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia

“…The former issue can be overcome by utilizing yttria‐stabilized zirconia (YSZ) which possesses lattice match with high In‐content InAlN; thus, it is a promising candidate for growing high In‐content semipolar InAlN. In this sense, YSZ substrates with different plane indices have been used to epitaxially grow semipolar InN with arbitrary planes , thereby indicating the feasibility of YSZ for successfully growing semipolar In‐rich InAlN. With regard to the miscibility gap of InAlN, the use of low‐temperature growth techniques could be a good solution.…”