Epitaxial growth of <i>n</i>+-<i>n</i> GaAs metal-semiconductor field-effect transistor structures using tertiarybutylarsine

Lum, R. M.; Klingert, J. K.; Ren, F.; Shah, N.J.

doi:10.1063/1.102791

Cited by 22 publications

(5 citation statements)

References 13 publications

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“…These characteristics represent the best results reported for MOCVD-grown MESFET's using TBA source [4], and are comparable to the characteristics of MOCVD-grown MES-FET devices using arsine source and silane doping in our laboratory. The maximum available gain at 31 GHz is 9 dB.…”

Section: DC and Microwave Characteristicssupporting

confidence: 81%

MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source

Mao

Sundaram

Żurek

et al. 1990

IEEE Electron Device Lett.

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Abstruct-High-performance 0.25-pm-gate MESFET's on MOCVDgrown epitaxial structure have been fabricated using tertiary butyl arsine (TBA) as the arsenic source. DC characterizations show that the extnnsic peak transconductance is 508 mS / mm. From on-wafer S-parameter measurements, the MESFET's show a current-gain cutoff frequency of 55 GHz and the maximum-available-gain cutoff frequency of 93 GHz. These results represent the best results reported for MOCVD-grown MESFET's using a TBA source, and compare favorably with the previously reported f, of 40 GHz for MBEgrown MESFET's.

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Section: DC and Microwave Characteristicssupporting

confidence: 81%

MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source

Mao

Sundaram

Żurek

et al. 1990

IEEE Electron Device Lett.

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“…Use of this improved source has enabled us to grow device-quality films [15] at temperatures as high as 700 0 C, which are characterized by background doping levels n<5xl0' 5 cm-3 and electron mobilities of 6500 and 45000 cm 2 /Vs at room temperature and 77K, respectively. Use of this improved source has enabled us to grow device-quality films [15] at temperatures as high as 700 0 C, which are characterized by background doping levels n<5xl0' 5 cm-3 and electron mobilities of 6500 and 45000 cm 2 /Vs at room temperature and 77K, respectively.…”

Section: Film Electrical Propertiesmentioning

confidence: 99%

Alternative Chemistries for Mocvd Growth of III/V Materials

Lum

Klingert

1990

MRS Proc.

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Alkyl substituted arsine compounds, R.AsH3..are attractive alternatives to arsine, AsH 3 . for metalorganic chemical vapor deposition (MOCVD) of GaAs-based compounds because they are typically low vapor pressure liquids which can be stored and handled more safely than the high-pressure gas cylinders used for AsH 3 . Despite their increased safety, the alkylarsines have not been widely used due to carbon incorporation problems and high background doping levels in the deposited films. To determine the impact of alternative growth chemistries on MOCVD processes we have investigated the thermochemistry controlling the decomposition of AsH 3 and its alkyl substitutes. Data are presented on the thermal stability of the Ascompounds, their resulting growth properties, and the composition and formation kinetics of the volatile products formed during thermal decomposition in an H 2 ambient. The gas phase reactions controlling decomposition are identified. The implications of our results for CVD growth models and the potential of alkylarsine compounds for different CVD processes are discussed.

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“…Codeposition of C intothe GaAs layer is minimized by using the partially alkylated reagent, tertiarybutylarsine, [(t -Bu) AsH 21. 6 Since this material is only somewhat less toxic than arsine, it stillrequires precautionsin use. Because it is a volatile liquid and not a gas at room temperature, (t -Bu) AsH 2 can be handled more safely than cylinders of compressedarsine gas.…”

Section: Alternatives To Compressed Gas Cylindersmentioning

confidence: 99%

Benign Precursors for Semiconductor Processing

Mitchell

Valdés

Cadet

1990

At&T Technical Journal

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Semiconductor manufacture notonly requires efficient processes that produce reliable products, but also should use benign precursors as input materials to generate a product and by-products thatare environmentally safe. Current device processing, byits nature, is demanding and depends on difficult-to-handle materials. As part of a long-term strategy to develop safer, more efficient processes that also have zero environmental impact, a technique is reported here for III-V processing thatobviatesthe need for transport, storage, and handling of arsine in high-pressure cylinders. This technique, called in situ generation, provides an immediate solution for a potential safety problem in current semiconductor processing, the "sudden release hazard" ofcylinders of compressed toxic gases. Other promising solutions for economically viable processing thatmeet safety and environmental compliances exploit chemically inert reagents in plasma reactors or use nontoxic precursors. Applications are described for the fabrication ofa broad range ofdevices requiring dry etching and chemical vapor deposition processing steps.

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Epitaxial growth of n+-n GaAs metal-semiconductor field-effect transistor structures using tertiarybutylarsine

Cited by 22 publications

References 13 publications

MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source

MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source

Alternative Chemistries for Mocvd Growth of III/V Materials

Benign Precursors for Semiconductor Processing

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