MOCVD-grown 0.25- mu m MESFET's using tertiary butyl arsine as the arsenic source

Abstract

Abstruct-High-performance 0.25-pm-gate MESFET's on MOCVDgrown epitaxial structure have been fabricated using tertiary butyl arsine (TBA) as the arsenic source. DC characterizations show that the extnnsic peak transconductance is 508 mS / mm. From on-wafer S-parameter measurements, the MESFET's show a current-gain cutoff frequency of 55 GHz and the maximum-available-gain cutoff frequency of 93 GHz. These results represent the best results reported for MOCVD-grown MESFET's using a TBA source, and compare favorably with the previously reported f, of 40 GHz for MBEgrown MESFET's.