Heterojunctions of n-type InAs0.95Sb0.05 grown by metalorganic chemical vapor deposition on n-type GaSb substrates were studied by capacitance-voltage and current-voltage measurements. The n-n heterojunctions are strongly rectifying and behave like metal-(n) GaSb Schottky diodes with a barrier height of 0.80±0.02 eV. These measurements establish that the band lineup in this system is of the broken gap variety. We measure the valence-band offset, Ev(GaSb)−Ev(InAs0.95Sb0.05), to be 0.67±0.04 eV.
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The vaporization reactions
24/5 normalCrPfalse(normalsfalse)=2/5 Cr12P7false(normalsfalse)+P2false(normalgfalse)false(1194–1479Kfalse)
,
2/3 Cr12P7false(normalsfalse)=8/3 Cr3Pfalse(normalsfalse)+P2false(normalgfalse)false(1421–1541Kfalse)
, and
2Cr3Pfalse(normalsfalse)=6normalCrfalse(normalsfalse)+P2false(normalgfalse)false(1543–1768Kfalse)
have been studied under mass‐loss effusion in the temperature ranges indicated. The reactions are kinetically inhibited. Enthalpies of formation and atomization, respectively, are found to be in kK: for
1/2normalCrPfalse(normalsfalse)
,
−5.69±0.18
and
49.67±0.2
; for
1/19 Cr12P7false(normalsfalse)
,
−4.48±0.32
and
49.47±0.3
; for
1/4 Cr3Pfalse(normalsfalse)
,
−3.18±0.04
and
49.08±0.04
.
normalCrP
is found to follow the trend in atomization enthalpy to valence state atoms established in the series
normalMnP
,
normalFeP
,
normalCoP
, and
normalNiP
.
We report a detailed study using photoluminescence and photoluminescence excitation of metalorganic chemical vapor deposition GaAs grown directly on Si substrates. Temperature variation and selective excitation allow reliable assignment of spectral features. This assignment permits measurements of strain and strain uniformity, identification of impurities, and assessment of general material quality. In 2–5-μm-thick layers similar spectra are observed with little variation from substrate character. Near 4 K, most samples show one of the two split valence-band features plus defect recombination, always including carbon. Strain uniformity varies widely and correlates with substrate thickness. The range of spectra observed from a variety of samples and guidelines for interpretation of nonresonantly excited spectra are discussed.
Successful application of GaAs on Si heteroepitaxy to majority-carrier device fabrication has recently been demonstrated. However, the quality of the GaAs heteroepitaxial films is considerably below that routinely achieved for films grown on GaAs substrates. We have investigated the initial growth stages of GaAs on Si using ion channeling and double-crystal -ray diffraction, and report improvements in the growth technique leading to higher quality GaAs films. The crystalline perfection of the films was found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Growth interruption after deposition of this layer, followed by an in situ annealing step (10 min at 750 °C) prior to final GaAs growth, improved both the structural and optical properties of the films.
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