Improvements in the heteroepitaxy of GaAs on Si

Abstract

Successful application of GaAs on Si heteroepitaxy to majority-carrier device fabrication has recently been demonstrated. However, the quality of the GaAs heteroepitaxial films is considerably below that routinely achieved for films grown on GaAs substrates. We have investigated the initial growth stages of GaAs on Si using ion channeling and double-crystal -ray diffraction, and report improvements in the growth technique leading to higher quality GaAs films. The crystalline perfection of the films was found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Growth interruption after deposition of this layer, followed by an in situ annealing step (10 min at 750 °C) prior to final GaAs growth, improved both the structural and optical properties of the films.

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

“…An extended study of the thermochemistry of alkyl substituted arsine sources was performed at atmospheric pressure using mass spectrometry to evaluate source stability and the reaction products [186]. The impact of metal-organic arsenic sources has been investigated, not only for hydride replacement, but as a way to modify the growth ambient to incorporate more carbon.…”

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

“…The major bottleneck problem required to be solved is the formation of high-density threading dislocations (TDs). The TDs result from the lattice mismatch between the III-V compounds like GaAs and Si [1,2]. And the presence of anti-phase domains also results in high dislocation density in III-V materials [3].…”

Ion-assisted nucleation and growth of GaN on sapphire(0001)

“…The nucleation problem for GaN onto these materials is particularly severe because of a low incorporation efficiency of the metal-organic precursors typically used for growth. 5 Several approaches have previously been developed for suppressing three-dimensional growth, including lowtemperature buffer layers, [6][7][8] adsorbed foreign surface species ͑i.e., surfactants͒, 9,10 and low-energy ion-assisted growth. 11 Of these approaches, ion-assisted growth has received relatively little attention.…”