Near-gap photoluminescence of GaAs grown directly on silicon

Harris, T. D.; Lamont, M. G.; Sauer, R.; Lum, R. M.; Klingert, J. K.

doi:10.1063/1.342418

Cited by 22 publications

(11 citation statements)

References 12 publications

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“…For small strain, the eigenvalues of the orbital-strain Hamiltonian can be calculated [8,50,82] and the shifts and bandgaps can be written as [8] 14)…”

Section: Effect Of Stress and Strain On The Valence Bandmentioning

confidence: 99%

“…they will not degrade by the generation of defects. Therefore extensive studies of stress and strain in latticemismatched III-V semiconductor epilayers [8,15,79,117,129], thermal strain in GaAs layers on Si [2,9,19,50,111,133,141,147], and in other III-V semiconductor layers on Si [41,42,78,108,112,130,136,142] have been made using the luminescence method. Etch pit, x-ray diffraction and topography studies have also been made [31,131,132].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Jain

Willander

Maes

1996

Semicond. Sci. Technol.

191

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Stresses and strains in heterostructures have dominated semiconductor research during the last ten years. We review the theory and experimental work on stresses in III-V semiconductor heterostructures in this paper. First large-area lattice mismatched layers (InGaAs and InGaP layers grown on GaAs or InP substrates) and thermally strained layers (GaAs, GaP and InP layers grown directly on Si) are considered. The stresses in large-area epilayer-substrate structures are easy to model because substrate distortion can be neglected and strain in the epilayer is a simple biaxial tetragonal distortion. Calculated splitting of band edges, modification of bandgaps and shifts of Raman modes show good agreement with experiments. Edges of a stripe relax stress in the stripes and induce stress in the substrate. Since stresses in the stripe and the substrate are coupled, calculation of stresses in stripes and substrates is more involved. Recent finite element (FE) calculations of these stresses are discussed in detail and compared with the approximate analytical models and with luminescence and Raman measurements. FE calculations of stresses in buried quantum wires, stressor-induced quantum wires and quantum dots are also discussed. The results of these calculations are used to determine stability and luminescence of the quantum wires and dots and compared with the experimental results. Finally self-organized quantum dots consisting of islands formed during the 3D growth of InAs layers on GaAs are discussed. A possible explanation of the recent observation that they are formed in vertical columns embedded in GaAs is suggested.

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“…For small strain, the eigenvalues of the orbital-strain Hamiltonian can be calculated [8,50,82] and the shifts and bandgaps can be written as [8] 14)…”

Section: Effect Of Stress and Strain On The Valence Bandmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Jain

Willander

Maes

1996

Semicond. Sci. Technol.

191

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show abstract

“…Consequently, in-plane strain can be assumed in the crystal. Although well known epilayer strain models [7][8][9][10] have been used to solve the inplane strain issues in epilayers, they cannot be applied to evaluate the strain in bulk mixed crystals, because strain in epilayers is induced by the abrupt change in lattice constant, which is not the case in bulk mixed crystals. However, the proposed strain model can be applied to investigate the strain in epilayers as well as in bulk mixed crystals.…”

Section: Radially Symmetrical Strain Modelmentioning

confidence: 99%

Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals

Islam

Verma

Hiroki

et al. 2004

Jpn. J. Appl. Phys.

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A radially symmetrical strain model has been proposed to determine the residual strain distribution induced by compositional variation in wafer-shaped bulk mixed crystals. The strain components in cylindrical coordinates are analytically derived by assuming a symmetrical variation of composition along the radial direction and uniform composition along the growth direction. The results obtained from the model demonstrated that the quantitative amount of strain and its distribution are highly dependent on the radial compositional profile and its range. The strain model is confirmed with the combination of micro-Raman scattering and optical transmission experiments, which were performed in single-crystalline Si 1Àx Ge x mixed material grown by the floating zone method. The experimental results indicated that there exists residual strain due to the compositional variation along the radial direction in Si 1Àx Ge x wafers, which is well explained by the strain model proposed here.

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“…12) On the other hand the subsequent cooling to room temperature induces thermal strain owing to the large difference of the thermal expansion coefficient. 13) The thermal strain shifts the bandgap energy and splits the near-band-edge emission. 14,15) In order to suppress the defects and to control the residual strain in GaAs, several approaches have been applied, including graded SiGe buffer layer, [16][17][18] bent and undercut substrates, 19,20) and selective aspect ratio trapping.…”

Section: Introductionmentioning

confidence: 99%

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Lee¹,

Chien²,

Fan³

et al. 2012

Jpn. J. Appl. Phys.

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The strains in GaAs nanowires, which were grown from 1700-to 80-nm-wide trenches on the Si(001) wafer with SiO 2 masks, were investigated by cathodoluminescence. For 1700-to 500-nm-wide trenches, the in-plane tensile strain at 15 K decreases with the decreasing trench width. The strain increases abruptly when the trench width is 300 nm, and then decreases as the trench width is further decreased. The results revealed that the stress induced by the SiO 2 sidewalls dominates when the width is less than the depth of the trench. This approach provides an effective technique to measure the strain of a single nanowire and helps for the demonstration of selectively-grown GaAs with a designed strain.

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Near-gap photoluminescence of GaAs grown directly on silicon

Cited by 22 publications

References 12 publications

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

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