Benign Precursors for Semiconductor Processing

Abstract

Semiconductor manufacture notonly requires efficient processes that produce reliable products, but also should use benign precursors as input materials to generate a product and by-products thatare environmentally safe. Current device processing, byits nature, is demanding and depends on difficult-to-handle materials. As part of a long-term strategy to develop safer, more efficient processes that also have zero environmental impact, a technique is reported here for III-V processing thatobviatesthe need for transport, storage, and handling of arsine in high-pressure cylinders. This technique, called in situ generation, provides an immediate solution for a potential safety problem in current semiconductor processing, the "sudden release hazard" ofcylinders of compressed toxic gases. Other promising solutions for economically viable processing thatmeet safety and environmental compliances exploit chemically inert reagents in plasma reactors or use nontoxic precursors. Applications are described for the fabrication ofa broad range ofdevices requiring dry etching and chemical vapor deposition processing steps.