Epitaxial cubic HfN diffusion barriers deposited on Si (001) by using a TiN buffer layer

Abstract

Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates J.Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer Cubic HfN ͑B1-NaCl͒ thin films were grown epitaxially on Si͑001͒ substrates by using a TiN ͑B1-NaCl͒ buffer layer as thin as ϳ10 nm. The HfN / TiN stacks were deposited by pulsed laser deposition with an overall thickness below 60 nm. Detailed microstructural characterizations include x-ray diffraction, transmission electron microscopy ͑TEM͒, and high resolution TEM. The electrical resistivity measured by four-point probe is as low as 70 ⍀ cm at room temperature.Preliminary Cu diffusion tests show a good diffusion barrier property with a diffusion depth ͑2 ͱ D͒ of 2 -3 nm after annealing at 500°C for 30 min in vacuum.

Atomic-scale mechanisms for diffusion of impurities in transition-metal nitrides

“…ZrN and HfN are another two members of the transition-metal nitride family that have attracted significant interest as diffusion barrier systems [12][13][14][15][16][17][18][19]. Several studies have revealed the critical role of various growth parameters on the efficiency of barrier films in blocking the permeation of copper impurities.…”

Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates

“…An effective approach that we have recently demonstrated is the application of a thin buffer layer before the HfN deposition. 19 The electrical resistivity of the HfN films, measured by the FPP technique, ranges from 38 lX cm to 52 lX cm, with an average value of about 45 lX cm. This low resistivity is comparable to the results reported by Shinkai et al 15 and much lower than other reported values (>100 lX cm).…”

Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating

“…Refractory transition-metal (TM) nitride thin films are used in a wide variety of applications due to their unique combination of properties, which include high hardness [1][2][3][4][5]; scratch and abrasion resistance [6]; low coefficient of friction [7]; high-temperature oxidation resistance [8][9][10]; and tunable optical [11,12], electrical [11,13,14], and thermal [14], properties. As a result, TM nitrides are widely used as wear-resistant coatings [15,16], decorative coatings [17], and diffusion barriers [18][19][20][21][22][23][24]; the latter because of their high thermal stability [10,25] and low electrical resistivity [13].…”