We report on bulk-heterojunction (BHJ) organic photovoltaics (OPVs) based on the self-assembled monolayer (SAM) 2PACz as a hole-selective interlayer functionalized directly onto the indium tin oxide (ITO) anode. The 2PACz is found to change the work function of ITO while simultaneously affecting the morphology of the BHJ deposited atop. Cells with PM6:N3 BHJ and ITO-2PACz anode exhibit a power conversion efficiency (PCE) of 16.6%, which is greater than that measured for bare ITO (6.45%) and ITO/PEDOT:PSS (15.94%) based devices. The enhanced performance is attributed to lower contact-resistance, reduced bimolecular recombination losses, and improved charge transport within the BHJ. Importantly, the ITO-2PACz-based OPVs show dramatically improved operational stability when compared with PEDOT:PSS-based cells. When the ITO-2PACz anode is combined with the ternary PM6:BTP-eC9:PC 71 BM BHJ, the resulting cells exhibit a maximum PCE of 18.03%, highlighting the potential of engineered SAMs for use in hole-selective contacts in high-performance OPVs.

Molecular doping has recently been shown to improve the operating characteristics of organic photovoltaics (OPVs). Here, we prepare neutral Diquat (DQ) and use it as n-dopant to improve the performance of state-of-the-art OPVs. Adding DQ in ternary bulk-heterojunction (BHJ) cells based of PM6:Y6:PC 71 BM is found to consistently increase their power conversion efficiency (PCE) from 16.7 to 17.4%. Analyses of materials and devices reveal that DQ acts as n-type dopant and morphology modifier for the BHJ leading to observable changes in its surface topography. The resulting n-doped BHJs exhibit higher optical absorption coefficients, balanced ambipolar transport, longer carrier lifetimes and suppressed bimolecular recombination, which are ultimately responsible for the increased PCE. The use of DQ was successfully extended to OPVs based on PM6:BTP-eC9:PC 71 BM for which a maximum PCE of 18.3% (uncertified) was achieved. Our study highlights DQ as a promising dopant for application in next generation organic solar cells.

Molecular doping is often used in organic semiconductors to tune their (opto)electronic properties. Despite its versatility, however, its application in organic photovoltaics (OPVs) remains limited and restricted to p‐type dopants. In an effort to control the charge transport within the bulk‐heterojunction (BHJ) of OPVs, the n‐type dopant benzyl viologen (BV) is incorporated in a BHJ composed of the donor polymer PM6 and the small‐molecule acceptor IT‐4F. The power conversion efficiency (PCE) of the cells is found to increase from 13.2% to 14.4% upon addition of 0.004 wt% BV. Analysis of the photoactive materials and devices reveals that BV acts simultaneously as n‐type dopant and microstructure modifier for the BHJ. Under optimal BV concentrations, these synergistic effects result in balanced hole and electron mobilities, higher absorption coefficients and increased charge‐carrier density within the BHJ, while significantly extending the cells' shelf‐lifetime. The n‐type doping strategy is applied to five additional BHJ systems, for which similarly remarkable performance improvements are obtained. OPVs of particular interest are based on the ternary PM6:Y6:PC71BM:BV(0.004 wt%) blend for which a maximum PCE of 17.1%, is obtained. The effectiveness of the n‐doping strategy highlights electron transport in NFA‐based OPVs as being a key issue.

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping−processing−nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Improving the charge carrier mobility of solution‐processable organic semiconductors is critical for the development of advanced organic thin‐film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small‐molecules, polymers, and small‐molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF‐TESADT:PTAA) and 2,7‐dioctyl[1]‐benzothieno[3,2‐b][1]benzothiophene:poly(indacenodithiophene‐co‐benzothiadiazole) (C8‐BTBT:C16‐IDTBT), for which hole mobilities of 8 and 11 cm2 V−1 s−1, respectively, are obtained. Doping of the 6,13‐bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V−1 s−1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p‐dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p‐doping and dopant‐induced long‐range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments

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All‐inorganic CsPbI3 holds promise for efficient tandem solar cells, but reported fabrication techniques are not transferrable to scalable manufacturing methods. Herein, printable CsPbI3 solar cells are reported, in which the charge transporting layers and photoactive layer are deposited by fast blade‐coating at a low temperature (≤100 °C) in ambient conditions. High‐quality CsPbI3 films are grown via introducing a low concentration of the multifunctional molecular additive Zn(C6F5)2, which reconciles the conflict between air‐flow‐assisted fast drying and low‐quality film including energy misalignment and trap formation. Material analysis reveals a preferential accumulation of the additive close to the perovskite/SnO2 interface and strong chemisorption on the perovskite surface, which leads to the formation of energy gradients and suppressed trap formation within the perovskite film, as well as a 150 meV improvement of the energetic alignment at the perovskite/SnO2 interface. The combined benefits translate into significant enhancement of the power conversion efficiency to 19% for printable solar cells. The devices without encapsulation degrade only by ≈2% after 700 h in air conditions.