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Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Spectroscopic ellipsometry ͑SE͒ was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiN x ) films with respect to their microstructure and stoichiometry. The films' properties can be tailored by varying the energy of bombarding ions during sputter deposition and the substrate temperature (T d ). The best metallic behavior of TiN x ͑resistivity 40 ⍀ cm and conduction density 5.5ϫ10 22 electrons/cm 3 ͒ has been observed in films developed with energy above 100 eV and T d у400°C. A redshift of the optical gaps has been observed for overstoichiometric films, suggesting it as a sensitive probe to investigate the TiN x stoichiometry. The energy, strength, and broadening of the interband transitions were studied with respect to the energy of ions and T d and they were explicitly correlated with the TiN x crystal cell size and grain orientation. On the other hand, the study of intraband absorption has provided the conduction electron density with respect to ion energy and T d , which promotes the densification of TiN x films due to different mechanisms. Combined SE and x-ray analysis was used to identify the electron scattering mechanisms, showing that the main electron scattering sites are the grain boundaries and the Ti vacancies for stoichiometric (xϭ1) and overstoichiometric (xϳ1.1) films, respectively.

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