Envelope Tracked Pulse Gate Modulated GaN HEMT Power Amplifier for Wireless Transmitters

Jouzdani, Maryam; Ebrahimi, Mohammad Mojtaba; Rawat, Karun; Helaoui, Mohamed; Ghannouchi, Fadhel M.

doi:10.1109/tcsi.2014.2362311

Cited by 13 publications

(4 citation statements)

References 22 publications

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“…where Z S is set as 5 and Z in is constructed by (3). Optimize the unknown h and let be as small as possible.…”

Section: Broadband Transformer Design and Implementationmentioning

confidence: 99%

“…However, there is no general analysis method to obtain a complex network for double-matching problem [2], such as the matching network of broadband microwave power amplifier (PA). The complex matching network of broadband Doherty power amplifier [3]- [7] has also been hard to be calculated in theory so far. As a compromise, a semi-analytical numerical technique, real frequency technique (RFT), was firstly proposed by Carlin and Yarman for the matching network design of antennas and PAs [8]- [10].…”

Section: Introductionmentioning

confidence: 99%

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Lowpass Network Synthesis Using “Feldtkeller Correction Approach”

Dai

Pang

et al. 2019

IEEE Access

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In this paper, a new method named ''Feldtkeller correction approach'' (FCA) is proposed to correct impedance function (Z in) during the circuit network synthesis process. With this method, the remaining Z in is corrected after each element is extracted from Z in , making it possible to ensure a successful synthesis. It is illustrated that a lossless low-pass network can be represented by certain polynomials constrained by Feldtkeller equation and a successful circuit synthesis can be continuous by updating the polynomial coefficients. Few examples are given to validate the proposed correction approach when it comes to the synthesis of the highest order impedance function. First, a 30th order Butterworth filter is implemented using FCA with a relative error of 1.0464 x 10 −7. Then, S-parameter simulation based on the synthesis elements is performed and proved to be entirely consistent with theoretical values. To demonstrate the robustness of this method, several randomly generated impedance functions are tested and the average relative error of 100 generated 35th-order impedance functions is calculated to be 3.7567 × 10 −5. Third, a 1-3 GHz transformer impedance function acquired by real frequency technique is successfully synthesized via FCA. Finally, an ultra-wideband power amplifier is also designed with the aid of FCA. These results demonstrate that the proposed approach can be used to successfully synthesize the impedance function lower than 36th order.

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“…where Z S is set as 5 and Z in is constructed by (3). Optimize the unknown h and let be as small as possible.…”

Section: Broadband Transformer Design and Implementationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lowpass Network Synthesis Using “Feldtkeller Correction Approach”

Dai

Pang

et al. 2019

IEEE Access

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“…Therefore, AlGaN/GaN HEMTs are suitable for realizing high-power and high-efficiency amplifiers for the next generation wireless communication, satellite communication and radar systems. [1][2][3][4] However, excessive gate leakage current in the power AlGaN/GaN HEMT remains a critical challenge. It is commonly believed that the high reverse gate leakage current is tunneling current caused by highdensity traps.…”

Section: Introductionmentioning

confidence: 99%

Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang¹,

Feng²,

Lv³

et al. 2016

Chinese Phys. B

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It has been reported that the gate leakage currents are described by the Frenkel-Poole emission (FPE) model, at temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I II ), is added. Based on the samples with different passivations, the I II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (ϕ B -V g ) 0.5 . Compared with these from the FPE model, the calculated results from the modified model agree well with the I g -V g measurements at temperatures ranging from 295 K to 475 K.

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“…Using digital signal processing techniques such as pulsed width modulation (PWM) or delta-sigma modulation, the time envelope varying signals can be converted to the constant envelope signals and then be amplified employing highly efficient switched mode power amplifiers [4][5][6][7][8]. In polar deltasigma transmitters, the envelope signal is digitized using a delta-sigma modulator (DSM) to a limited number of levels for the drain supply modulation [9].…”

Section: Introductionmentioning

confidence: 99%

High efficiency delta-sigma transmitter architecture with gate bias modulation for wireless applications

Jouzdani

Ghannouchi

2015

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)

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 This paper proposes an efficient envelope delta-sigma based transmitter architecture with gate bias modulation for modern wireless communication systems. Using this architecture, envelope varying signals are converted to constant envelope signals. The constant envelope phase signal is up-converted and amplified utilizing high efficiency power amplifier, while the two level delta-sigma modulated envelope signal is used to switch the gate of the power amplifier. To validate the proposed technique, a prototype transmitter is implemented and evaluated. A Long-Term Evolution (LTE) uplink signal with the bandwidth of 3.84 MHz and the peak-to average power ratio (PAPR) of 7 dB is used to validate the linearity and efficiency performance of the transmitter setup. Using the LTE uplink signal, the polar architecture with modulated gate bias is able to achieve the average drain efficiency of 48% and PAE of 42% at the output power of 25.5dBm. The adjacent channel leakage ratio (ACLR) measured for this signal is less than -31dBc at 10 MHz offset from the center frequency of 2.35GHz. The measurement results are able to meet the spectrum mask without linearization techniques.

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Envelope Tracked Pulse Gate Modulated GaN HEMT Power Amplifier for Wireless Transmitters

Cited by 13 publications

References 22 publications

Lowpass Network Synthesis Using “Feldtkeller Correction Approach”

Lowpass Network Synthesis Using “Feldtkeller Correction Approach”

Modified model of gate leakage currents in AlGaN/GaN HEMTs

High efficiency delta-sigma transmitter architecture with gate bias modulation for wireless applications

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