Enlightening gallium nitride-based UV photodetectors

Abstract

This article enlightens the emerging demand of Gallium Nitride (GaN) semiconductor technology as it offers superior optoelectronic properties which make it suitable for a highly efficient ultraviolet (UV) photodetection device....

Economically detaching transparent and flexible (Al,Ga)N nanowire films with improved photoelectric response in view of ultraviolet photodetectors

“…Recently, flexible and transparent optoelectronic devices provide many novel functionalities and have the potential to open up a new branch of industry, such as wearable intelligent electronics, flexible screens, automobile windshield navigation, and IoT (Internet of Things) applications, etc. [1][2][3][4][5][6] Due to the extraordinary characteristics of low power consumption, being nontoxic, long lifetime and high efficiency, GaN-based materials are promising for the above fields. 7,8 Because of its tunable bandgap and superior stability against radiation, the (Al,Ga)N material has already attracted extensive consideration.…”

“…3,11,12 Due to the small foot-print and strain release, GaN-based NWs can decrease defects and improve the quality. 2,7,[13][14][15][16] Compared to planar films, the larger surface-to-volume ratio of NWs allows a higher generation of carriers. [1][2][3] Hence, to further improve the flexibility and quality, it is necessary and advantageous to detach films comprising (Al,Ga)N NWs.…”

“…2,7,[13][14][15][16] Compared to planar films, the larger surface-to-volume ratio of NWs allows a higher generation of carriers. [1][2][3] Hence, to further improve the flexibility and quality, it is necessary and advantageous to detach films comprising (Al,Ga)N NWs. 1,3 Over the past few years, the III-N semiconductor materials are mostly grown on the rigid substrates, such as sapphire, SiC and others, which can not meet the growing requirements for flexible and transparent devices.…”

Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

“…Conventionally, such PDs are derived from Si-based sensors with photomultiplier tubes, which consisted of complex architecture. With the discovery of wide bandgap semiconductor materials such as GaN, its inherent thermal and chemical stability ensure stable performance [28,29].…”

“…With low activation energy, a higher concentration of dopants would be introduced during growth to compensate for such losses. Consequently, this would reduce carrier mobility, thus leading to a slower response [28].…”