We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (∼104 for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials.
Self-powered
ultraviolet (UV) photodetectors (PDs) are promising
and essential for the applications of next-generation optoelectronic
devices. This work proposes and demonstrates a self-powered photoelectrochemical
(PEC) PD with three excellent characteristics successfully, which
are the ultrahigh transmissivity, ultrahigh UV/visible reject ratio
and responsivity. Thanks to the ultrahigh transmissivity, the PD can
achieve the critical factor of quasi-invisible functionality to realize
the 360° omnidirectional detection. Due to the angle-dependent
photoresponsivity, this PEC PD can be utilized for quickly identifying
the light direction. Furthermore, as the epitaxial substrate can have
a nonignorable visible response, the key reason for obtaining the
ultrahigh UV/visible reject ratio and excellent detection selectivity
should be the removal of the epitaxial substrate. It is also found
that the SiO2 layer can significantly enhance the photoresponsivity
by suppressing the leakage current. With a demonstrated high stability,
this PD would enable a broad range of optoelectronic applications,
including 360° omnidirectional detection and UV communication.
Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.
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