Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Aggarwal, V.; Ch, Ramesh; Varshney, Urvashi; Tyagi, Prashant; Gautam, Sudhanshu; Mauraya, Amit Kumar; Yadav, B. S.; Gupta, Govind; Ganesan, Ramakrishnan; Kumar, M. Senthil; Kushvaha, S. S.

doi:10.1007/s00339-022-06134-3

Cited by 8 publications

(5 citation statements)

References 60 publications

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“…The response speed of PDs could be evaluated with the rise/fall time, with rise time being the time difference from 10 to 90% of the peak amplitude on the leading edge of the pulse, and fall time being the time difference from 90 to 10% of the trailing edge of the pulse. As for the former reported photoconductive devices, 40,41 the response speed of GaN PD is slow with the rise/fall time evaluated to be 0.17/25.46 s (full transient curve is shown in Figure S10). For MAPbCl 3 PD, a slow trapping and detrapping process can be observed in the rising and falling curve, 45,46 with the rise/fall time evaluated to be 0.19/2.07 ms.…”

Section: Acsmentioning

confidence: 59%

“…The responsivity of GaN PD is high, which matches well with the former reported similar photoconductors with rich trap states, contributing a high photoconductive gain. 35,40,41 Figure 3c shows the measured noise current spectral densities of MAPbCl 3 /GaN PD and the control singlelayer devices. The noise spectrum of GaN PD shows a typical flicker noise (1/f) with dominative trend, with the noise level 5 orders of magnitude overall higher than the ones measured in the other two devices.…”

Section: Acsmentioning

confidence: 99%

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Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Jiang,

Wei,

et al. 2024

ACS Photonics

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The state-of-the-art visible-blind ultraviolet (UV) photodetectors (PDs) are generally demonstrated to have typical photoconductor or photodiode structures, without the tunability to balance different photosensing parameters. Here, we propose a specially designed perovskite/GaN-based light-modulated bipolar junction transistor (BJT) for visible-blind UV photodetection. As the conduction-band-aligned p-n-p junction at the CH3NH3PbCl3/GaN interface dominates the photocarrier dynamics, the saturated photocurrent collected with the electrodes on the perovskite film is linearly dependent on the optical power pumped on the GaN film with multiplication. This device reaches a saturated output at 0.5 V, reporting a responsivity of 0.43 A/W, a specific detectivity of 4.11 × 1012 Jones, a rise/fall time of 70.50/71.83 μs, and the highest linear dynamic range of 159 dB. Our device provides a structure panel to optimize the trade-off between responsivity and response speed, with a comprehensive performance outperforming the published similar UV PDs and commercial products. Moreover, it can be readily integrated with GaN-based lighting devices for full-duplex communication in light-fidelity (LiFi) networks.

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Section: Acsmentioning

confidence: 59%

Section: Acsmentioning

confidence: 99%

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Jiang,

Wei,

et al. 2024

ACS Photonics

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“…When UV light is incident on the PD device, e–h pair is generated due to the internal photoelectric effect, and the conduction of these photogenerated charge carriers leads to the photocurrent in the external circuit. Further, the nonlinear I – V curve indicates the formation of Schottky barrier-type contact at the metal/semiconductor interface . The Schottky barrier formation occurs due to the difference between the electron affinity of semiconductor materials (Bi 2 Se 3 = 4.45 and GaN = 4.1 eV) and the work function of the Au metal electrode (5.1 eV). , …”

Section: Resultsmentioning

confidence: 99%

“…Further, the nonlinear I−V curve indicates the formation of Schottky barrier-type contact at the metal/semiconductor interface. 58 The Schottky barrier formation occurs due to the difference between the electron affinity of semiconductor materials (Bi 2 Se 3 = 4.45 and GaN = 4.1 eV) and the work function of the Au metal electrode (5.1 eV). 59,60 Further, to deeply understand the photoresponse behavior of the MSM UV PD devices, we have performed the transient device 1, the photocurrent at 5 V and 15 mW was found to be ∼60 μA [Figure 5a], whereas the device formed on the junction (device 2) has a photocurrent of ∼344 μA.…”

Section: Resultsmentioning

confidence: 99%

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Kumar

Aggarwal

Yadav

et al. 2023

ACS Appl. Electron. Mater.

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Recent progress in topological insulating materials predicts a promising future for their applications in developing innovative quantum, electronic, and optoelectronic devices. The integration of topological insulators with technologically important semiconductors can open up different ways to build high-efficiency devices. Here, we have fabricated topological insulator Bi2Se3/GaN hybrid structure-based photodetectors (PDs) and studied their photoresponse characteristics in the ultraviolet (UV) region. Raman and high-resolution X-ray diffraction spectroscopy measurements revealed the formation of the c-axis-oriented rhombohedral crystal structure of the Bi2Se3 film. X-ray photoelectron spectroscopy studies disclosed the formation of a stoichiometric Bi2Se3 thin film on n-GaN. The Bi2Se3 thin film with the magnetotransport property exhibits a metallic nature with an upturn in resistivity below 20 K which possesses a weak antilocalization effect under an applied magnetic field, confirming the topological insulating behavior. Further, we have fabricated metal–semiconductor–metal-type PD devices on the hybrid structure of Bi2Se3/n-GaN, Bi2Se3/n-GaN junction, and pristine n-GaN. The photoresponse measurements have been performed using a UV (355 nm) light source by varying the laser power (1–15 mW) and the external bias (0–5 V). The calculated value of photoresponsivity of the PD devices on the Bi2Se3/n-GaN hybrid structure is found to be seven-fold higher than that of pristine-GaN. Further, it is observed that devices consisting of a Bi2Se3 film and GaN show self-powered UV PD characteristic nature. This study adds a significant step to enhance the performance of UV PDs based on large-area GaN templates by several folds with the help of topological Bi2Se3/GaN hybrid structures.

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“…But the production of excellent detectors often needs to overcome some existing problems, such as selecting a suitable device substrate, solving lattice mismatches and avoiding poor film quality due to inconsistent molar ratio with metal ions. To solve these problems, it often requires very complex processes and expensive equipment, such as atomic layer deposition, laser molecular beam epitaxy (LMBE), lateral epitaxy overgrowth, metal-organic chemical vapor deposition, pulsed atomic layer epitaxy, pulsed laser deposition, RF magnetron sputtering and reduced area epitaxy [10,[13][14][15][16][17][18]. The detectors made by these methods are not only complex in technology, but also high in cost and energy.…”

Section: Introductionmentioning

confidence: 99%

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Fang,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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The detection of ultraviolet (UV) radiation holds significant importance in various fields. As the demand for superior detector performance grows alongside advancements in science and technology, there is a need for detectors with larger light-to-dark rejection ratios and lower standby power consumption. This paper presents the outstanding performance of the rare earth metal oxide Nd2O3 in broadband UV detection. With a wide forbidden band width of 4.6 eV, eliminating the requirement for additional filters, Nd2O3 emerges as an ideal material for broadband UV detectors. The device exhibits remarkable characteristics, including a dark current of only 1.66 × 10−11 A at a 5 V bias voltage, a light-to-dark rejection ratio of 1.33 × 103 at 280 nm and 15 μW cm−2, a responsiveness of 0.061 A W−1, and a detection rate of 4.7 × 1012 Jones. Furthermore, the performance of the device can be significantly enhanced through the formation of a heterojunction with TiO2. The heterojunction device exhibits a shortened response time of 78.64%, a reduced recovery time of 88.97%, and an increased light-to-dark rejection ratio of 2.75 × 103 at a 5 V bias voltage. This significant improvement in performance highlights the potential of the Nd2O3/TiO2 heterojunction in broadband UV detection.

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Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Cited by 8 publications

References 60 publications

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

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Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Cited by 8 publications

References 60 publications

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd2O3

Contact Info

Product

Resources

About

Topological Bi₂Se₃/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃