Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage

Chang, T. C.; Mor, Y. S.; Liu, Po–Tsun; Tsai, Tzu-I; Chen, C. W.; Mei, Y. J.; Sze, Simon M.

doi:10.1016/s0040-6090(01)01312-8

Cited by 24 publications

(17 citation statements)

References 6 publications

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“…11 show that in H 2 O 2 -free solutions, s ad (Ta) for SO 4 2-is the lowest among the systems considered, and remains essentially invariant between pH 3 and 6. This in turn suggests that the adsorption of SO 4 2-is more efficient than those of NO 3 -and H 2 PO 4 -on Ta, where the surface coverage of SO 4 2-probably stays at its saturation value in the entire pH range tested in Fig. 11.…”

Section: Adsorption Characteristics Of Oxyanions On Ta and Tan Determmentioning

confidence: 85%

“…KOH and HNO 3 were used to adjust the solution pH (3)(4)(5)(6). The solution compositions used in these experiments were previously optimized for CMP of Ta [4,5].…”

Section: Methodsmentioning

confidence: 99%

“…As oxyanions from the solution adsorb onto the electrode, they compete with the O 2-anions to react with the Ta 5? cations generated within the oxide film via reaction (3). Thus, in the presence of oxyanions, reaction (4) occurs in parallel with a simultaneous reaction taking place between the oxyanion and Ta 5?…”

Section: Instrumentation and Proceduresmentioning

confidence: 99%

“…Guided by the International Roadmap for Semiconductors (ITRS) [2], the new strategies for barrier-CMP focus on a reduced down pressure (\2 psi) polishing to prevent structural damages to the underlying ''low-k'' dielectrics. In addition, since Si-based low-k materials tend to chemically decompose in alkaline media, weakly acidic/neutral slurry solutions often are preferred for CMP [3]. As demonstrated recently by Surisetty et al [4,5], it might be possible to meet these new requirements of Ta/TaN CMP in a costeffective and environmentally compatible approach, by using simple oxyanions like sulfate, nitrate, and phosphate as surface-modifying agents in the polishing slurries.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical investigation of the roles of oxyanions in chemical–mechanical planarization of tantalum and tantalum nitride

et al. 2011

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Nitrate, sulfate, and phosphate oxyanions are shown to serve as effective surface-modifying agents for low-pressure chemical-mechanical planarization (CMP) of Ta and TaN barrier layers of interconnect structures. The surface reactions that form the basis of this CMP strategy are investigated using cyclic voltammetry, open circuit potential and polarization resistance measurements, and impedance spectroscopy. The results suggest that forming structurally weak layers of surface oxides is crucial to chemically controlling the CMP of Ta/TaN at low polish-pressures. It is shown that in oxyanion-based slurries, this can be accomplished by modifying the sample surfaces with anionincorporated oxide films of Ta or TaN, which, in turn, can readily be removed with moderate abrasion. Electrochemical results elaborate the reaction mechanisms that lead to anion-modified oxides, such as Ta 2 O 5(1

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Section: Adsorption Characteristics Of Oxyanions On Ta and Tan Determmentioning

confidence: 85%

“…KOH and HNO 3 were used to adjust the solution pH (3)(4)(5)(6). The solution compositions used in these experiments were previously optimized for CMP of Ta [4,5].…”

Section: Methodsmentioning

confidence: 99%

Section: Instrumentation and Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrochemical investigation of the roles of oxyanions in chemical–mechanical planarization of tantalum and tantalum nitride

et al. 2011

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“…5 shows that the dielectric constant of HSQ film increases with increasing O 2 plasma exposure time. The reason of this again is the structural transformation of Si H bonds to Si OH and Si O bonds [11]. The high polarity water molecules (dielectric constant ∼76) present in the HSQ film give rise to an increase in both leakage current and dielectric constant.…”

Section: Resultsmentioning

confidence: 99%