Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment

Singh, Sunil Kumar; Kumbhar, Avinash S.; Dusane, Rajiv O.

doi:10.1016/j.mseb.2005.09.042

Cited by 13 publications

(8 citation statements)

References 11 publications

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“…Despite these studies, which led to a better understanding of plasma-ULK interactions, at present no simple way has been found to totally avoid plasma damage of the low-k during plasma etching. Many low damage options have been explored up till now 3 , 13 – 17 . The first type of approach consists of repairing the organo-silicate material after the etching process, through in-situ CH 4 plasma 18 or subsequent sylilation 13 Some restoration may be obtained, but it is partial and is typically restricted to a few nanometers, leading to residual bulk damage.…”

Section: Introductionmentioning

confidence: 99%

“…Many low damage options have been explored up till now 3 , 13 – 17 . The first type of approach consists of repairing the organo-silicate material after the etching process, through in-situ CH 4 plasma 18 or subsequent sylilation 13 Some restoration may be obtained, but it is partial and is typically restricted to a few nanometers, leading to residual bulk damage. Another method consists of removing the porogen after low-k integration 19 (post-integration porogen burn-out).…”

Section: Introductionmentioning

confidence: 99%

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Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Chanson

Zhang

Naumov

et al. 2018

Sci Rep

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The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT, the onset of micro-capillary condensation occurs around +20 °C and the low-k matrix is filled at −20 °C. The condensed phase shows high stability from −50 < T ≤−35 °C, and persists in the pores when the low-k is exposed to a SF6-based plasma discharge. The etching properties of a SF6-based 150W-biased plasma discharge, using as additive this new HBPO gas, shows that negligible damage can be achieved at −50 °C, with acceptable etch rates. The evolution of the damage depth as a function of time was studied without bias and indicates that Si-CH3 loss occurs principally through Si-C dissociation by VUV photons.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Chanson

Zhang

Naumov

et al. 2018

Sci Rep

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“…That is to say, the O 2 plasma causes deterioration in the low‐ k property of HSQ films. There are many ways to repair the damage, such as trimethylchlorosilane treatment 12 and hydrogen plasma treatment 13…”

Section: Introductionmentioning

confidence: 99%

Structure Characterization of HSQ Films for Low Dielectrics Uses D4 as Sacrificial Porous Materials

Yin

Zhao-Yuan

Yuan

et al. 2007

Journal of the American Ceramic Society

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Hydrogensilsesquioxane (HSQ) (low-k) films were prepared by spin-on deposition using D4 (octamethyl cyclotetrasiloxane) as a sacrificial porous material. The dielectric constant of silica films significantly changed from 3.0 to 2.2. Fourier transform infrared spectroscopy was used to identify the network structure and cage structure of the Si-O-Si bond and other bonds that may appear. We studied the structural and electrical properties of the spin-coated films prepared by mixing HSQ and D4 films after oxygen plasma exposure for 5 min, and studied the structural recovery of the damage by annealing at 3501C for 1.5 h in a nitrogen (N 2 ) ambient. This structure results in significant lowering of the dielectric constant (k) on annealing at 3501C for 1.5 h in an N 2 ambient and improvement in the leakage current density.

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“…To enable an efficient coupling between the LED emission and waveguided plasmons, a 250 nm slit is etched in the bottom gold layer using electron beam lithography and xenon ion milling. The insulating layer of the MIM waveguide consists of 65 nm spin-coated hydrogen sylsesquioxane (HSQ) which is cured for 90 min in a 100 W oxygen plasma, resulting in a planarizing layer having the optical properties of SiO 2 . The top metal layer is also sputter deposited (Au/Ti 160 nm/2 nm) and subwavelength slits are etched in this layer to allow out-coupling of the MIM gap plasmons to free-space radiation.…”

mentioning

confidence: 99%

“…The insulating layer of the MIM waveguide consists of 65 nm spin-coated hydrogen sylsesquioxane (HSQ) which is cured for 90 min in a 100 W oxygen plasma, resulting in a planarizing layer having the optical properties of SiO 2 . 13 The top metal layer is also sputter deposited (Au/Ti 160 nm/2 nm) and subwavelength slits are etched in this layer to allow out-coupling of the MIM gap plasmons to free-space radiation. As a last step, a AuGe/ Ni/Au contact is deposited on the backside of the wafer.…”

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confidence: 99%

Electrical Excitation of Confined Surface Plasmon Polaritons in Metallic Slot Waveguides

et al. 2010

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We present the realization of an integrated electrical source of confined surface plasmon polaritons (SPPs) in metal-insulator-metal waveguides. Using an integrated light-emitting diode (LED) and subwavelength slits, we can couple light emitted by the LED directly into waveguided plasmon modes. Polarization-dependent measurements, decay length measurements, and spectral measurements are performed to confirm the electrical excitation of SPPs and characterize the properties of the plasmonic waveguide.

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Repairing plasma-damaged low-k HSQ films with trimethylchlorosilane treatment

Cited by 13 publications

References 11 publications

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Structure Characterization of HSQ Films for Low Dielectrics Uses D4 as Sacrificial Porous Materials

Electrical Excitation of Confined Surface Plasmon Polaritons in Metallic Slot Waveguides

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