Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Ding, Yi-min; Shi, Junjie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shing‐Tai

doi:10.1039/c7nr02725g

Cited by 91 publications

(44 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, 2D InSe nanosheets have been fabricated into vdWs heterostructures with a series of other 2D materials, including BP, graphene, GaSe, etc., providing a new platform to develop multifunctional optoelectronic devices . As a typical p‐type 2D semiconductor, BP has been considered as a desirable candidate to form high performance 2D p–n junctions thanks to its tunable bandgaps and outstanding electronic properties .…”

Section: Optoelectronic Applications Based On 2d Group Iii–vi Heterosmentioning

confidence: 99%

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Yang

Hao

2019

Adv Materials Technologies

118

View full text Add to dashboard Cite

During the past decade, great effort has been devoted to research on 2D layered materials due to their reduced thickness and extraordinary physical properties, which open new opportunities for developing next‐generation applications in various fields. Ultrathin III–VI semiconductors (e.g., GaSe, InSe, In2Se3, etc.) have emerged as potential candidates for nano‐optoelectronic applications thanks to their sizable layer‐dependent bandgaps and high carrier mobility, which could enable broadband photodetection and efficient conversion of solar energy. A systematic review is provided on 2D III–VI semiconductor‐based state‐of‐the‐art optoelectronic devices, such as phototransistors, photoconductors, and solar cells, reported in recent years. To better understand the mechanism and performance of the devices, an introduction to the electronic structures and optical properties of several representative III–VI members is first given. A comprehensive overview is then given on device geometry design, operating principles, and performance in optoelectronic applications based on III–VI semiconductors and their heterostructures. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities in this field is provided.

show abstract

Section: Optoelectronic Applications Based On 2d Group Iii–vi Heterosmentioning

confidence: 99%

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Yang

Hao

2019

Adv Materials Technologies

118

View full text Add to dashboard Cite

show abstract

“…These prominent properties imply that InSe is a promising candidate for broadband photodetectors with rapid response . If a vertical structure could be obtained by covering InSe on the surface of BP, where InSe is working as visible light absorbing media, both the stability of BP under ambient conditions could be significantly improved, and the response range of the photodetector based on the vertical structure could be extended as the theoretical prediction …”

Section: Introductionmentioning

confidence: 99%

Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity

Cao

Wang

Guo

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

cooling system is usually needed to ensure that these traditional photodetectors possess a relatively high performance. Since the first 2D material, graphene, was discovered in 2004, [1] 2D material-based photodetectors have attracted considerable attention. [2,3] Graphene is a promising material for photodetectors due to its ultrabroadband absorption spectrum, which includes the whole ultraviolet (UV) spectrum and ranges up to terahertz wavelengths. [4][5][6] However, the development of photodetectors based on pristine graphene is limited by the short lifetime of photoexcited carriers and the low absorption efficiency of incident photons. [7] Furthermore, pristine graphene with a zero bandgap will result in a large dark current, which is not suitable for highly responsive photo detectors. Although many methods can be applied to give graphene a semiconducting transport property and small bandgap, the photoresponse capability of graphene with small bandgap, especially for a certain spectral range, is still not comparable to that of other 2D semiconductors. [8,9] In addition to graphene, semiconducting transition metal dichalcogenides (TMDs), such as WS 2 , WSe 2 , MoS 2 , MoTe 2 , etc., [10][11][12][13][14][15] have been shown to possess remarkable optical and electronic properties [16] and are expected to be promising basic materials for broadband, high-sensitivity photodetectors due to their various bandgaps, ranging from less than 1 eV to well above 2.5 eV. [17][18][19] However, due to their relatively large bandgaps, they are not suitable for infrared light detection.Black phosphorous (BP), with a direct bandgap of ≈1.5 eV for the monolayer form and 0.3 eV for bulk form, [20,21] which covers the near-and mid-infrared band and exhibits unique properties due to its high carrier mobility, [22][23][24] compatibility with a diverse range of substrates, and moderate bandgap. These unique properties make BP a promising candidate for broadband optoelectronic applications. [25][26][27][28] However, the reactivity of BP to oxygen under ambient conditions will lead to compositional and physical changes, causing BP to lose its advantageous electronic and optical properties. This reactivity hinders the practical application of BP for broadband photodetectors with rapid response time. [29,30] In addition, BP-based photodetectors have a weak response to visible light due to the bandgap. To extend the photoresponse range of BP, a BP/ MoS 2 heterojunction was fabricated by Hong et al., and the 2D materials offer tremendous opportunities for designing and investigating multifunctional high-performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorous (BP). The photodetector built with the vertical structure possesses a wide response range from 405 to 1550 nm, and the photodetector exhibits a relatively fast (≈22 ms) response and high responsivity of ≈53.80 A W −1 at λ = 655 nm and 43.11 ...

show abstract

“…Taking into account of the tensor properties of the dielectric functions, we averaged 1 (ω) and 2 (ω) over three polarization vectors (along x, y, and z directions). The electron and hole mobilities were computed by the widely used formula [21,50]…”

Section: Computational Methods and Modelsmentioning

confidence: 99%

The 2D InSe/WS₂ Heterostructure with Enhanced Optoelectronic Performance in the Visible Region*

Yang¹,

Shi²,

Zhang³

et al. 2019

Chinese Phys. Lett.

Self Cite

View full text Add to dashboard Cite

Two-dimensional (2D) InSe and WS 2 exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible light due to wide band gaps. 2D InSe has high electron mobility but low hole mobility, while 2D WS 2 is on the opposite. Here, we design a 2D heterostructure composed of their monolayers and study its optoelectronic properties by first-principles calculations. Our results show that the heterostructure has a direct band gap of 2.19 eV, which is much smaller than those of the monolayers mainly due to a type-II band alignment: the valence band maximum and the conduction band minimum of monolayer InSe are lower than those of monolayer WS 2 , respectively. The visible-light absorption is enhanced considerably, e.g. about fivefold (threefold) increase at the wavelength of 490 nm in comparison to monolayer InSe (WS 2 ). The type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs, i.e., electrons (holes) reside preferably in the InSe (WS 2 ) layer. The two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS 2 monolayers, respectively.

show abstract

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Cited by 91 publications

References 65 publications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity

The 2D InSe/WS₂ Heterostructure with Enhanced Optoelectronic Performance in the Visible Region*

Contact Info

Product

Resources

About

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Cited by 91 publications

References 65 publications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity

The 2D InSe/WS2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region*

Contact Info

Product

Resources

About

The 2D InSe/WS₂ Heterostructure with Enhanced Optoelectronic Performance in the Visible Region*