Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Yang, Zhibin; Hao, Jianhua

doi:10.1002/admt.201900108

Cited by 118 publications

(57 citation statements)

References 159 publications

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“…These calculations revealed how the bandgap of InI could be engineered, which is highly desirable in electronics and optoelectronics device applications. [ 32,33 ]…”

Section: Resultsmentioning

confidence: 99%

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection

Suleiman

Huang

Jin

et al. 2020

Adv Elect Materials

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Layered InI has a great potential in optoelectronic applications due to its direct wide tunable bandgap. However, there is no single report about its 2D synthesis. Here, the growth of high‐quality and ultrathin InI flake (as thin as 8 nm) is reported via space‐confined physical vapor deposition. Impressively, an InI flake‐based photodetector exhibits an ultralow off‐state current of ≈4.2 × 10−12 A, high on/off photocurrent ratio of 104, excellent detectivity of 4.2 × 1012 Jones, a high‐speed response time of 10 ms, as well as excellent effective quantum efficiency of 1600%, suggesting its promising applications in optoelectronics.

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“…These calculations revealed how the bandgap of InI could be engineered, which is highly desirable in electronics and optoelectronics device applications. [ 32,33 ]…”

Section: Resultsmentioning

confidence: 99%

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection

Suleiman

Huang

Jin

et al. 2020

Adv Elect Materials

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“…Layered two-dimensional (2D) group III metal chalcogenides (MCs) (GaSe, GaTe, InSe, and others) are still of strong interest for the development of novel high-performance semiconductor devices due to their unique electronic and optical properties [ 1 , 2 , 3 ]. In particular, these materials have attracted great attention for the fabrication of field-effect transistors [ 4 ], solar cells [ 5 , 6 ], high-efficient photodetectors, and gas sensing devices [ 7 , 8 ]. InSe has significant potential for using in thermoelectric applications [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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“…), are also expected to be coupled with optical architectures for device performance improvement. 48,163 dimensional layered materials and devices, organic semiconductors, nanomaterials and nanoscopic characterization, and high thermal conductive materials. He is a Fellow of IEEE and HKIE, and recipient of Vice-Chancellor's Outstanding Fellow of Engineering, CUHK.…”

Section: Discussionmentioning

confidence: 99%

Enhancing light‐matter interaction in 2D materials by optical micro/nano architectures for high‐performance optoelectronic devices

Tao

Chen

et al. 2020

InfoMat

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Two-dimensional materials are a promising solution for next-generation electronic and optoelectronic devices due to their unique properties. Owing to the atomic thickness of 2D materials, the light-matter interaction length in 2D materials is much shorter than that in bulk materials, which limits the performance of optoelectronic devices composed of 2D materials. To improve the light-matter interactions, optical micro/nano architectures have been introduced into 2D material optoelectronic devices. In this review, we present a concise introduction and discussion of various strategies for the enhancement of lightmatter interaction in 2D materials, namely, the plasmonic effect, waveguide, optical cavity, and reflection architecture. We have outlined the current advances in high-performance 2D material optoelectronic devices (eg, photodetectors, electrooptic modulators, light-emitting diodes, and molecular sensors) assisted by these enhancement strategies. Finally, we have discussed the future challenges and opportunities of micro/nano photonic structure designs in 2D material devices.

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Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Cited by 118 publications

References 159 publications

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Enhancing light‐matter interaction in 2D materials by optical micro/nano architectures for high‐performance optoelectronic devices

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