1999
DOI: 10.1016/s0169-4332(98)00436-x
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Enhancement of diamond nucleation on silicon substrates in pulsed laser assisted hot filament CVD

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Cited by 7 publications
(2 citation statements)
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“…These temperature increases were calculated by the heat conduction equation. 13 The three different laser powers corresponding to the three different input currents, 6, 7, and 8 mA, were called low-, medium-and highpower heating conditions, respectively. The deposition conditions were 5 h and 21-25 mbar in pressure.…”
Section: Methodsmentioning
confidence: 99%
“…These temperature increases were calculated by the heat conduction equation. 13 The three different laser powers corresponding to the three different input currents, 6, 7, and 8 mA, were called low-, medium-and highpower heating conditions, respectively. The deposition conditions were 5 h and 21-25 mbar in pressure.…”
Section: Methodsmentioning
confidence: 99%
“…high thermal conductivity, high strength, and lowest compressibility) of diamond make it an ideal material for many applications, such as in cutting tools, coatings for magnetic disks, optical switches [1], electronic devices [2], spintronics devices, and quantum computational components [3] and more. Various surface pre-treatment methods have been used to enhance the nucleation density of diamond [4][5][6][7][8]. All these reported methods lead to surface alteration or damage (usually by the formation of nano-scale pits, scratches and defects concentration) and even contaminate the substrate.…”
Section: Introductionmentioning
confidence: 99%