Free standing graphene-diamond hybrid films have been fabricated using saturated hydrocarbon polymers as seeding material by hot filament chemical vapor deposition technique. The films are characterized with x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS). The XRD shows the characteristic diffraction peaks of both diamond and graphene. The Raman spectrum shows the characteristic band of diamond at 1332 cm−1 and D, G, and 2D bands of graphene at 1349, 1592, and 2687 cm−1, respectively. Both SEM and TEM depict the presence of diamond and graphene in the films. The EELS recorded in the carbon K-edge region also shows the signature peaks of diamond and graphene. The free standing hybrid films exhibit a remarkably low turn-on field of about 2.4 V/μm and a high emission current density of 0.1 mA/cm2. Furthermore, emission currents are stable over the period of 7 days. The superior field emission characteristics of the free standing graphene-diamond hybrid films are attributed to the heat sink capability of diamond and high electrical conductivity of graphene.
Candle wax was used as a precursor for the production of a diamond-nanotube composite in a single step. The composite films were fabricated by sulfur-assisted hot-filament chemical vapor deposition technique. The morphology of the composite films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectra of the films show characteristic diamond band at 1,332 cm−1, D-band around 1,342 cm−1, and graphitic G-band around 1,582 cm−1. The electron energy-loss spectroscopy recorded at the carbon K-edge region shows signature features of diamond and carbon nanotube in the fabricated material. The ability to synthesize diamond-nanotube composites at relatively low temperatures by a single-step process opens up new possibilities for the fabrication of nanoelectronic devices.
Silicon nanowires (SiNWs) were uniformly decorated with ultrananocrystalline diamond (UNCD) by a novel route using paraffin wax as the seeding source, which is more efficient in the creation of diamond nuclei than traditional methods. These one-dimensional ultrananocrystalline diamond-decorated SiNWs (UNCD/SiNWs) exhibit uniform diameters ranging from 100 to 200 nm with a bulbous catalytic tip of ∼250 nm in diameter and an UNCD grain size of ∼5 nm. UNCD/SiNW nanostructures demonstrated enhanced electron field emission (EFE) properties with a turn-on field of about 3.7 V/μm. Current densities around 2 mA/cm(2) were achieved at 25 V/μm, which is significantly enhanced as compared to bare SiNWs.
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