Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

Liu, Y.; Egawa, Takashi; Jiang, Hao

doi:10.1049/el:20061150

Cited by 25 publications

(19 citation statements)

References 8 publications

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“…Despite the implementation of an ultrathin AlN spacer to reduce the alloy scattering and enhance the 2DEG confinement [3], the growth of the ternary alloy remains challenging. On the other hand, a quaternary InAlGaN compound is attractive as a barrier layer since it allows easier adjustment of the band gap and strain state with suitable Al/In ratios [4][5][6][7][8][9][10]. Recently, we have reported InAlGaN/AlN/GaN heterostructure HEMTs with a sub-10-nm ultrathin quaternary barrier with a state-of-the-art electron mobility of 1800 cm 2¨V´1¨s´1 and a sheet carrier density of 1.9ˆ10 13 cm´2 at room temperature [11].…”

Section: Introductionmentioning

confidence: 99%

InAlGaN/GaN HEMTs at Cryogenic Temperatures

et al. 2016

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Abstract:We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm 2¨V´1¨s´1 combined with a sheet carrier density of 1.93ˆ10 13 cm´2 leading to a remarkably low sheet resistance of 44 Ω/˝are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (f T /f max ) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 µm technology confirmed the outstanding 2DEG properties.

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Section: Introductionmentioning

confidence: 99%

InAlGaN/GaN HEMTs at Cryogenic Temperatures

et al. 2016

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“…Lanford et al [3] developed the E-mode HEMT with the recessed-gate structure by etching a part of AlGaN layer of the AlGaN/GaN heterostructure, which realized E-mode HEMT by using the depletion effect of Schottky junction on 2DEG. Wang et al [4] reported an E-mode HEMT realized by F ion implant doping and Liu et al [5] demonstrated a non-recessed E-mode device on AlInGaN/GaN. We report a recessed-gate E-mode AlGaN/GaN HEMT, and analyze the influence of recessed-gate depth and annealing temperature on device characteristics.…”

Section: Introductionmentioning

confidence: 92%

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Hao

Wang

et al. 2008

Sci. China Ser. E-Technol. Sci.

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Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1Pm gate-length, 10 nm recessed-gate depth, 4 Pm distance of source and drain exhibit a maximum drain current of 233 mA/mm at 1.5 V, a maximum transconductance of 210 mS/mm, and a threshold voltage of 0.12 V. The threshold voltage of these devices increased to 0.53 V after 500 5 min annealing in N 2 ambient. The saturation drain current and transconductance of 15 nm recessed-gate depth reduced compared to those of 10 nm recessed-gate depth, but the threshold voltage increased to 0.47 V. The relations between threshold voltage, controlling ability of gate and recess depth were validated by testing C-V structures on AlGaN/GaN heterostructures with different etching depth. enhancement-mode high electron mobility transistors, AlGaN/GaN, recessed-gate, threshold voltage

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“…1 Moreover, Al x In y Ga 1-x-y N material is very promising in the high-frequency, large-power devices application. There are two advantages in Al x In y Ga 1-x-y N material.…”

Section: Introductionmentioning

confidence: 99%

“…It can be concluded from the room temperature Hall mobility data of 2200 cm 2 /(Vs) (Al 0.72 In 0.11 Ga 0.17 N), 4 and 1770 cm 2 /(Vs) (Al 0.83 In 0.13 Ga 0.04 N), 5 and 1318 cm 2 /(Vs) (Al 0. 12 In 0.006 Ga 0.874 N), 6 8 that increasing the composition dependent electron mobility assists to enhance the performance of the In x Al y Ga 1-x-y N heterojunction field effect transistors (HFETs). In our previous work, 9 we established the model of the alloy disorder scattering limited mobility in AlInGaN/GaN heterojunctions using virtual crystal approximation, and put forward some guidance to estimate the direction of the mobility change with the Al(In,Ga)N composition.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

Zhang

Liu

et al. 2017

AIP Advances

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We established the model of the electron mobility limited by the alloy composition fluctuation scattering in the quaternary AlxInyGa1-x-yN/GaN heterojunctions for the first time. The alloy composition fluctuation along the AlxInyGa1-x-yN/GaN heterointerface was considered and characterized by the lateral correlation length L, and the fluctuations of aluminum and indium mole fractions (Δx and Δy) independent to each other. The situation of alloy composition fluctuation is investigated in the following cases. Only x or y fluctuates, and both x and y fluctuate with equal/unequal amplitudes in the same/opposite direction. We find that the scattering with both x and y fluctuating in the same direction is the weakest, while x and y fluctuating in the opposite directions leads to the strongest scattering. This in nature stems from the disparity of the bandgap and polarization in AlInN, AlGaN and GaN. The effects of different parameters, such as x and y, Δx and Δy, L, and the thickness of AlxInyGa1-x-yN barrier layer d on the mobility are also studied. The model will in principle give a universal explanation to the effect of alloy composition fluctuation scattering on the carrier mobility in the GaN-based heterostructures with ternary or quaternary alloy barrier layers.

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Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

Cited by 25 publications

References 8 publications

InAlGaN/GaN HEMTs at Cryogenic Temperatures

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Theoretical analysis of the mobility of two-dimensional electron gas in the quaternary AlxInyGa1-x-yN/GaN heterojunctions limited by the alloy composition fluctuation

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