Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Hao, Yue; Wang, Chong; Ni, JinYu; Feng, Qian; Zhang, Jincheng; Mao, Wei

doi:10.1007/s11431-008-0088-7

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…[12][13][14][15] Nevertheless, these conventional methods all need the plasma treatment process, which unavoidably introduce the damages to the active region of HFETs. These damages will increase the on-state resistance (R on ) and gate leakage current, [16][17][18][19][20][21] which deteriorate switching performance and limit forward gate voltage swing. In order to solve this problem, recently, selective area growth (SAG) technique had been demonstrated 22) to realize a novel recessed gate normally-off devices, in which no plasma treatment process was involved.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Wen

et al. 2012

Jpn. J. Appl. Phys.

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In this report, two types of normally-off AlGaN/GaN heterostructure field effect transistors (HFETs) with recessed-gate structure have been fabricated by using common technique of induced coupled plasma (ICP) dry etching and a novel technique of selective area growth (SAG), respectively. The devices fabricated by SAG (SAG-HFET) showed better performance than that of ICP-HFETs with larger maximum drain current of 300 mA/mm, positive threshold voltage of 0.4 V, and lower pinch off channel leakage current (2.17×10-3 mA/mm). The analysis indicates that such obvious difference originated from the different AlGaN quality of the gate region under the Schottky contact, in which the damage to the gate region stemmed from dry etching can be avoided by the SAG technique so that the forming of higher quality Schottky contact can be guaranteed. These results indicate that SAG technique is a promising method for fabricating the normally-off GaN based HFETs.

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Section: Introductionmentioning

confidence: 99%

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Wen

et al. 2012

Jpn. J. Appl. Phys.

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“…5) because the lack of charge control for thicker layers. Varying t penetration has less effect on f T and f max , but a significant impact on V T and g m [39][40][41]. C gg increases with decreasing t penetration , which compensates for the increase in g m [30][31][32], thereby resulting in a constant f T and f max .…”

Section: Resultsmentioning

confidence: 99%

The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Danielraj¹,

Deb²,

Mohanbabu

et al. 2021

J Comput Electron

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A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor (CAVET) device with a borondoped current block layer (B-CBL) on an n + GaN substrate is proposed, designed, and demonstrated herein. Enhancementmode (E-mode) operation is achieved in the proposed device by introducing a 1-μm-thick p-GaN CBL layer into the recessed Δ-shaped gate of the metal-insulator-semiconductor (MIS) high-electron-mobility transistor (HEMT) structure. The device exhibits a threshold voltage of 6.76 V, a drain current saturation of I ds,sat = 3.44 kA/cm 2 , a transconductance of g m = 783.42 S/cm 2 , and an ON/OFF current ratio > 10 10 A/ cm 2 . The breakdown voltage in the OFF-state (V BR,OFF ) shows a maximum of 1590 V and a minimum of 1513 V for a CBL layer thickness (t B-CBL ) of 0.2 and 1 µm at a gate bias of 0 V. The lowest ON-state resistance (R ON ) achieved is 1.24 Ω cm 2 , accompanied by a low gate current of I g,L < 10 -9 and a drain leakage current of I d,L < 10 -8 A/mm. The device exhibits high-frequency performance with peak f t and f max values of 5.12 GHz and 36.8 GHz, respectively, as measured from two-port Y parameters with an Si 3 N 4 thickness (t Si3N4 ) of 40 nm and a recessed penetration depth (t penetration ) of 0.2 µm at V ds = 10 V. Finally, the performance of the vertical CAVET AlGaN/GaN MIS-HEMT power switching device with a boron-doped GaN CBL is analyzed using an ultralow-loss boost converter circuit. The results of the analysis of the demonstrated device indicate that it is a suitable candidate for use in high-power low-loss switching applications.

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“…26) When the bias voltage is positive and overcomes a critical value (about 0.5 V), the positive leakage current of the Schottky diode becomes so high that the equivalent model for calculating capacitance is not available. 27,28) Figure 5(a) shows the influence of annealing temperature on the I-V characteristics of the AlGaN/GaN HFET devices with a gate length and a gate-source/drain spacing of 3 and 3 m, respectively. The gate voltage is swept from À6 to +1 V. All of the devices can operate well with the saturation current exhibiting a negative conductance at a high drain voltage.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Kishi

Shiraishi

et al. 2013

Jpn. J. Appl. Phys.

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In this study, we evaluated the annealing temperature and time-dependent electrical properties of AlGaN/GaN heterostructure field-effect transistors (HFETs) utilizing TiN/W/Au as the gate electrode. With the annealing temperature increasing from 750 to 900 °C for the annealing time of 1 min, the sheet resistance of TiN/W/Au films increased gradually while that of the ohmic contact was minimum (0.66 Ω mm) at 800 °C. From the current–voltage characteristics of the Schottky diode and HFETs, it is demonstrated that annealing at 800 °C showed the lowest on-resistance and highest maximum drain current. By prolonging the annealing from 0.5 to 10 min at 800 °C, good device performance was achieved when the annealing time was 1 and 3 min, while the device performance degraded showing an increased gate leakage current and gate resistance with increasing annealing time. These results demonstrated that the TiN/W/Au gate, which can withstand 800 °C annealing for a short time, is suitable for application in the gate-first process for AlGaN/GaN HFETs.

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Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Cited by 5 publications

References 11 publications

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

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