Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

“…In addition, we have found that the MMC structure demonstrates lower off-state-stress-induced current collapse [29]. Very recently, similar device structures were reported by Liu et al [30] and Lu et al [31]. They demonstrated a similar V TH shift and good normally-off operation in nano-channel array AlGaN/GaN HEMTs [30] and tri-gate GaN metal-insulator-semiconductor field-effect transistors [31] …”

“…As the mesa-top width was decreased, a systematic shift of the threshold voltage (V TH ) toward the positive voltage direction was observed in MMC HEMTs. In particular, the MMC HEMT with W top = 50 nm showed a V TH nearly equal to 0 V. Liu et al [30] and Lu et al [31] reported a similar V TH shift and good normally-off operation in nano-channel array AlGaN/GaN HEMTs and tri-gate GaN metal-insulator-semiconductor field-effect transistors, respectively. The gate leakage currents are also plotted by broken lines.…”

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

“…However, a precise control to obtain a series of Vp with these methods is very challenging, which makes them less suited to explore the |Vp| dependence of the IR. Here we used a tri-gate structure to reduce the |Vp| [29], [30], as it offers great control to tune the Vp by changing the width of the nanowires (w) in the tri-gate. We implemented tri-gate FPs in SBDs for both conventional recessed anodes and novel tri-anodes [1] to justify our approach, and compared them with other literature results to show the generality of the model.…”

Slanted Tri-Gates for High-Voltage GaN Power Devices

“…3(a) and (b), the Vp increases smoothly with narrowing nanowires. This is mainly due to the partial relaxation of the AlGaN/GaN nanowires as well as additional electrostatic control from the sidewall gates (for the range of w investigated in this work) [16,17]. The smooth dependence of Vp on w offers a much more controllable way to obtain the gradient of the Vp with the tri-gate architecture.…”